C. Richard

A 55 nm triple gate oxide 9 metal layers SiGe BiCMOS technology featuring 320 GHz f<inf>T</inf> / 370 GHz f<inf>MAX</inf> HBT and high-Q millimeter-wave passives

P. Chevalier, G. Avenier, G. Ribes et al. · 2014 · 173 citations

Engineering, Electrical Engineering, Microelectronics +15

A multi-wavelength 3D-compatible silicon photonics platform on 300mm SOI wafers for 25Gb/s applications

S. Crémer, Nathalie Vulliet, Thierry Pinguet et al. · 2013 · 95 citations

Engineering, Electrical Engineering, Optoelectronics +16

Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient

P. Caubet, Tom Blomberg, R. Benaboud et al. · Journal of The Electrochemical Society · 2008 · 48 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

300 GHz f/sub max/ self-aligned SiGeC HBT optimized towards CMOS compabitility

P. Chevalier, B. Barbalat, Laurent Rubaldo et al. · 2005 · 36 citations

Engineering, Electrical Engineering, Materials Science +17

230 GHz self-aligned SiGeC HBT for 90 nm BiCMOS technology

P. Chevalier, C. Fellous, Laurent Rubaldo et al. · 2004 · 35 citations

Engineering, Electrical Engineering, Microelectronics +16