High-Speed SiGe BiCMOS Technologies: 120-nm Status and End-of-Roadmap Challenges

Abstract

This paper presents the status of high-speed SiGe BiCMOS technologies at STMicroelectronics. Process and electrical characteristics of two 120-nm platforms, qualified or under development, are presented together with results demonstrated on optical and millimeter-wave circuits. Advanced developments addressing end-of-roadmap BiCMOS are also presented and discussed.