High-Speed SiGe BiCMOS Technologies: 120-nm Status and End-of-Roadmap Challenges

P. Chevalier, B. Barbalat, M. Laurens, B. Vandelle, Laurent Rubaldo, B. Geynet, S.P. Voinigescu, Timothy O. Dickson, N. Zerounian, S. Chouteau,

2007 · 35 citations · 14 references

Concepts

Abstract

This paper presents the status of high-speed SiGe BiCMOS technologies at STMicroelectronics. Process and electrical characteristics of two 120-nm platforms, qualified or under development, are presented together with results demonstrated on optical and millimeter-wave circuits. Advanced developments addressing end-of-roadmap BiCMOS are also presented and discussed.

References

14