J.L. Regolini

Silicon-on-Nothing (SON)-an innovative process for advanced CMOS

M. Jurczak, T. Skotnicki, M. Paoli et al. · IEEE Transactions on Electron Devices · 2000 · 215 citations

Low-power Electronics, Hardware Security, Electrical Engineering +15

Band-edge and deep level photoluminescence of pseudomorphic Si1−<i>x</i>−<i>y</i>Ge<i>x</i>C<i>y</i> alloys

P. Boucaud, Colin G. Francis, F. H. Julien et al. · Applied Physics Letters · 1994 · 100 citations

Optical Materials, Engineering, Optoelectronic Devices +16

Growth and characterization of strain compensated Si1−x−y epitaxial layers

J.L. Regolini, F. Gisbert, G. Dolino et al. · Materials Letters · 1993 · 84 citations

Materials Science, Engineering, Applied Physics +4

Passivation issues in active pixel CMOS image sensors

J.L. Regolini, Daniel L. Benoit, P. Morin · Microelectronics Reliability · 2007 · 77 citations

Electrical Engineering, Engineering, Computer Engineering +5

Selective epitaxial silicon growth in the 650–1100 °C range in a reduced pressure chemical vapor deposition reactor using dichlorosilane

J.L. Regolini, D. Bensahel, E. Scheid et al. · Applied Physics Letters · 1989 · 63 citations

Materials Engineering, Chemical Engineering, Epitaxial Growth +15