J.L. Regolini - Concepedia

Author

J.L. Regolini

Also Known As

J. L. REGOLINI, J. L. Regolini, J. L. Régolini, J. Regolini, J.-L. Regolini, J.L Regolini, J.L. Regolini, J.L., Regolini, Jorge L. Regolini, Jorge Luis Regolini

128

Publications

Citations

H-Index

Concepts

All Affiliations

Orange (France)Centre National de la Recherche Scientifique STMicroelectronics (France)Université Paris-Saclay STMicroelectronics (Switzerland)

About

J.L. Regolini is an author at Orange (France) specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	25	50	1.7K
2	Applied Physics	25	49	1.7K
3	Chemical Engineering	6	6	192
4	Natural Sciences	5	5	145
5	Medicine	1	1	22

J.L. Regolini

Publications

1.8K

Citations

H-Index

Page 1

	Year	Citations
Silicon-on-Nothing (SON)-an innovative process for advanced CMOS M. Jurczak, T. Skotnicki, M. Paoli, IEEE Transactions on Electron Devices Low-power ElectronicsHardware SecurityElectrical EngineeringBuried DielectricEngineering	2000	215
Band-edge and deep level photoluminescence of pseudomorphic Si1−<i>x</i>−<i>y</i>Ge<i>x</i>C<i>y</i> alloys P. Boucaud, Colin G. Francis, F. H. Julien, Applied Physics Letters Optical MaterialsEngineeringOptoelectronic DevicesSemiconductor NanostructuresSemiconductors	1994	100
Growth and characterization of strain compensated Si1−x−y epitaxial layers J.L. Regolini, F. Gisbert, G. Dolino, Materials Letters Materials ScienceEngineeringApplied PhysicsSi1−x−y Epitaxial LayersThin Films	1993	84
Passivation issues in active pixel CMOS image sensors J.L. Regolini, Daniel L. Benoit, P. Morin Microelectronics Reliability Electrical EngineeringEngineeringComputer EngineeringActive DevicePassivation Issues	2007	77
Selective epitaxial silicon growth in the 650–1100 °C range in a reduced pressure chemical vapor deposition reactor using dichlorosilane J.L. Regolini, D. Bensahel, E. Scheid, Applied Physics Letters Materials EngineeringChemical EngineeringEpitaxial GrowthEngineeringHydrogen Transition	1989	63
Selective Si and SiGe epitaxial heterostructures grown using an industrial low-pressure chemical vapor deposition module S. Bodnar, E. de Berranger, Pierre Bouillon, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Selective SiSige Epitaxial HeterostructuresElectrical EngineeringSemiconductor TechnologyEngineering	1997	60
Scanning-electron-beam annealing of arsenic-implanted silicon J.L. Regolini, J. F. Gibbons, T. W. Sigmon, Applied Physics Letters Materials ScienceElectrical EngineeringScanning-electron-beam AnnealingEngineeringIon Implantation	1979	59
Porous silicon: material properties, visible photo- and electroluminescence G. Bomchil, A. Halimaoui, I. Sagnes, Applied Surface Science Materials SciencePhotoluminescenceEngineeringNanoporous MaterialApplied Physics	1993	55
A high-speed low 1/f noise SiGe HBT technology using epitaxially-aligned polysilicon emitters S. Jouan, R. Planche, H. Baudry, IEEE Transactions on Electron Devices Electrical EngineeringEngineeringHigh-speed Low 1/FRf SemiconductorHigh-frequency Device	1999	55
Hydrogen desorption and diffusion in PECVD silicon nitride. Application to passivation of CMOS active pixel sensors Daniel Benoit, J.L. Regolini, P. Morin Microelectronic Engineering Chemical EngineeringEngineeringSurface ScienceApplied PhysicsHydrogen Desorption	2007	52

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