D. Bensahel

Electrical Behavior of Phase-Change Memory Cells Based on GeTe

L. Perniola, Véronique Sousa, A. Fantini et al. · IEEE Electron Device Letters · 2010 · 139 citations

Engineering, Emerging Memory Technology, Phase-change Memories +17

Admittance spectroscopy: A powerful characterization technique for semiconductor crystals—Application to ZnTe

J.L. Pautrat, B. Katircioǧlu, N. Magnéa et al. · Solid-State Electronics · 1980 · 138 citations

Semiconductors, Ii-vi Semiconductor, Engineering +8

Enhanced photoluminescence of heavily n-doped germanium

M. El Kurdi, T. Kociniewski, T.-P. Ngo et al. · Applied Physics Letters · 2009 · 123 citations

Ii-vi Semiconductor, Room Temperature, Electrical Engineering +14

Engineering strained silicon on insulator wafers with the Smart CutTM technology

B. Ghyselen, Jean‐Michel Hartmann, T. Ernst et al. · Solid-State Electronics · 2004 · 114 citations

Insulator Wafers, Semiconductor Technology, Electrical Engineering +8

Electroluminescence from strain-compensated Si0.2Ge0.8/Si quantum-cascade structures based on a bound-to-continuum transition

Laurent Diehl, S. Menteşe, E. Müller et al. · Applied Physics Letters · 2002 · 94 citations · Full text

Intersubband Electroluminescence, Engineering, Optoelectronic Devices +16