Acceptor states in CdTe and comparison with ZnTe. General trends

E. Molva, J.L. Pautrat, K. Saminadayar, +2

Physical review. B, Condensed matter

EngineeringElectronic Excited StateLuminescence PropertyIi-vi SemiconductorAcceptor States +14

Donors and acceptors in tellurium compounds; The problem of doping and self-compensation

J.L. Pautrat, J. M. Francou, N. Magnéa, +2

Journal of Crystal Growth

Materials ScienceInorganic ChemistryEngineeringApplied PhysicsTellurium Compounds +3

Admittance spectroscopy: A powerful characterization technique for semiconductor crystals—Application to ZnTe

J.L. Pautrat, B. Katircioǧlu, N. Magnéa, +3

Solid-State Electronics

SemiconductorsIi-vi SemiconductorEngineeringPhysicsOptical Properties +6

The segregation of impurities and the self-compensation problem in II-VI compounds

J.L. Pautrat, N. Magnéa, J. P. Faurie

Journal of Applied Physics

EngineeringCrystal Growth TechnologyChemistryIi-vi SemiconductorChemical Engineering +21

Single-electron charging effect in individual Si nanocrystals

T. Baron, P. Gentile, N. Magnéa, +1

Applied Physics Letters

Materials ScienceNanocrystalline MaterialIndividual Si NanocrystalsEngineeringIndividual Silicon Nanocrystals +13

Optical identification of substitutional acceptors in refined ZnTe

N. Magnéa, D. Bensahel, J.L. Pautrat, +1

physica status solidi (b)

Optical MaterialsEngineeringOptical TestingNeutral AcceptorsSolid-state Chemistry +17

Nitrogen doping of Te-based II–VI compounds during growth by molecular beam epitaxy

T. Baron, K. Saminadayar, N. Magnéa

Journal of Applied Physics

Materials ScienceOxide HeterostructuresSemiconductorsP-type DopingDoping Efficiency +13

Indium doping of CdTe and Cd1−<i>x</i>Zn<i>x</i>Te by molecular-beam epitaxy: Uniformly and planar-doped layers, quantum wells, and superlattices

F. Bassani, S. Tatarenko, K. Saminadayar, +4

Journal of Applied Physics

EngineeringOptoelectronic DevicesPlanar-doped LayersSemiconductor NanostructuresSemiconductors +15

Exciton binding energies and the valence-band offset in mixed type-I–type-II strained-layer superlattices

Philippe Peyla, Y. Merle d’Aubigné, A. Wasiela, +5

Physical review. B, Condensed matter

EngineeringType IiElectronic StructureSemiconductor NanostructuresSemiconductors +16

Accurate control of the misorientation angles in direct wafer bonding

Frank Fournel, H. Moriceau, B. Aspar, +4

Applied Physics Letters

Materials ScienceWafer Scale ProcessingEngineeringAdvanced Packaging (Semiconductors)Microfabrication +12