J. P. Faurie - Concepedia

Author

J. P. Faurie

Also Known As

Faurie., J.-P., J P Faurie, J-P Faurie, J-P. Faurie, J. -P. Faurie, J. P. FAURIE, J. P. Faurie, J.-P Faurie, J.-P. Faurie, J.-P. Faurie,

186

Publications

3.9K

Citations

H-Index

Concepts

All Affiliations

University of Illinois Chicago Centre National de la Recherche Scientifique Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications Laboratoire de physique des Solides

About

J. P. Faurie is an author at University of Illinois Chicago specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Applied Physics	35	87	3.3K
2	Engineering	34	83	3.1K
3	Natural Sciences	8	8	281
4	Health Sciences	1	1	13
5	Biomolecular Engineering	1	1	36

J. P. Faurie

Publications

3.5K

Citations

H-Index

Page 1

	Year	Citations
Optoelectronic properties of Cd1−<i>x</i>Zn<i>x</i>Te films grown by molecular beam epitaxy on GaAs substrates D. J. Olego, J. P. Faurie, S. Sivananthan, Applied Physics Letters EngineeringOptoelectronic DevicesSemiconductor NanostructuresSemiconductorsIi-vi Semiconductor	1985	176
Direct observation of the core structures of threading dislocations in GaN Yan Xin, S. J. Pennycook, Nigel D. Browning, Applied Physics Letters Materials ScienceHexagonal GanWide-bandgap SemiconductorEngineeringDislocation Interaction	1998	173
Linearity (commutativity and transitivity) of valence-band discontinuity in heterojunctions with Te-based II-VI semiconductors: CdTe, HgTe, and ZnTe Trần Minh Đức, C. Hsu, J. P. Faurie Physical Review Letters SemiconductorsIi-vi SemiconductorTe-based Ii-vi SemiconductorsEngineeringPhysics	1987	152
Defect characterization in ZnO layers grown by plasma-enhanced molecular-beam epitaxy on (0001) sapphire substrates F. Vigué, P. Vennéguès, S. Vézian, Applied Physics Letters Materials ScienceOxide HeterostructuresOxygen PolarityEngineeringSapphire Substrates	2001	108
Molecular beam epitaxial growth of CdTe and HgCdTe on Si (100) R. Sporken, S. Sivananthan, K. K. Mahavadi, Applied Physics Letters Materials ScienceSemiconductorsElectrical EngineeringIi-vi SemiconductorEngineering	1989	107
The segregation of impurities and the self-compensation problem in II-VI compounds J.L. Pautrat, N. Magnéa, J. P. Faurie Journal of Applied Physics EngineeringCrystal Growth TechnologyChemistryIi-vi SemiconductorChemical Engineering	1982	99
CdTe-GaAs(100) interface: MBE growth, rheed and XPS characterization J. P. Faurie, C. Hsu, S. Sivananthan, Surface Science Letters Ii-vi SemiconductorMbe GrowthApplied PhysicsSemiconductor MaterialCompound Semiconductor	1986	97
Nanoindentation of Si, GaP, GaAs and ZnSe single crystals S.E. Grillo, M. Ducarroir, Marie-Hélène Nadal, Journal of Physics D Applied Physics Materials ScienceIi-vi SemiconductorMaterial AnalysisEngineeringSevere Plastic Deformation	2002	93
Relation between crystallographic orientation and the condensation coefficients of Hg, Cd, and Te during molecular-beam-epitaxial growth of Hg1−<i>x</i>Cd<i>x</i>Te and CdTe S. Sivananthan, Xiangfeng Chu, J. Reno, Journal of Applied Physics Materials ScienceIi-vi SemiconductorCondensation CoefficientCondensation CoefficientsEngineering	1986	85
Micro Epitaxial lateral overgrowth of GaN/sapphire by Metal Organic Vapour Phase Epitaxy Éric Frayssinet, B. Beaumont, J. P. Faurie, MRS Internet Journal of Nitride Semiconductor Research	2002	74

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