J. P. Faurie

Optoelectronic properties of Cd1−<i>x</i>Zn<i>x</i>Te films grown by molecular beam epitaxy on GaAs substrates

D. J. Olego, J. P. Faurie, S. Sivananthan et al. · Applied Physics Letters · 1985 · 176 citations

Engineering, Optoelectronic Devices, Semiconductor Nanostructures +20

Direct observation of the core structures of threading dislocations in GaN

Yan Xin, S. J. Pennycook, Nigel D. Browning et al. · Applied Physics Letters · 1998 · 173 citations · Full text

Materials Science, Hexagonal Gan, Wide-bandgap Semiconductor +14

Linearity (commutativity and transitivity) of valence-band discontinuity in heterojunctions with Te-based II-VI semiconductors: CdTe, HgTe, and ZnTe

Trần Minh Đức, C. Hsu, J. P. Faurie · Physical Review Letters · 1987 · 152 citations

Semiconductors, Ii-vi Semiconductor, Te-based Ii-vi Semiconductors +13

Defect characterization in ZnO layers grown by plasma-enhanced molecular-beam epitaxy on (0001) sapphire substrates

F. Vigué, P. Vennéguès, S. Vézian et al. · Applied Physics Letters · 2001 · 108 citations

Materials Science, Oxide Heterostructures, Oxygen Polarity +14

Molecular beam epitaxial growth of CdTe and HgCdTe on Si (100)

R. Sporken, S. Sivananthan, K. K. Mahavadi et al. · Applied Physics Letters · 1989 · 107 citations

Materials Science, Semiconductors, Electrical Engineering +13