Concepedia

Growth and characterization of strain compensated Si1−x−y epitaxial layers

J.L. Regolini, F. Gisbert, G. Dolino, P. Boucaud

Materials Letters · 1993 · 84 citations · 6 references

DOI

Concepts

References

6

Physics and applications of Ge<sub>x</sub>Si<sub>1-x</sub>/Si strained-layer heterostructures

R. People · IEEE Journal of Quantum Electronics · 1986 · 706 citations

, , +17

Growth and strain compensation effects in the ternary Si1−<i>x</i>−<i>y</i>Ge<i>x</i>C<i>y</i> alloy system

K. Eberl, Subramanian S. Iyer, Stefan Zollner et al. · Applied Physics Letters · 1992 · 315 citations

, , +17

Optical band gap of the ternary semiconductor Si1−<i>x</i>−<i>y</i>Ge<i>x</i>C<i>y</i>

Richard Soref · Journal of Applied Physics · 1991 · 171 citations

, , +17

X-ray diffraction effects in Ga and Al arsenide structures MBE-grown on slightly misoriented GaAs (001) substrates

P Auvray, M. Baudet, A. Regreny · Journal of Crystal Growth · 1989 · 59 citations

, , +12

Strain compensation by Ge in B-doped silicon epitaxial films

W. Maszara, T. D. Thompson · Journal of Applied Physics · 1992 · 41 citations

, , +17