Epitaxial Strain

Epitaxial Strain is the lattice mismatch-induced elastic deformation occurring in a thin film when it is grown epitaxially on a substrate with a differing crystal lattice parameter, constraining the film’s in-plane lattice dimensions to align with those of the underlying substrate.

1.6K

Publications

79.4K

Citations

6.3K

Authors

1.1K

Institutions

Publications per year

2017–2026

279

Authors

6.3K

  1. LW
    Lane W. Martin

    University of California, Berkeley, United States

    21 publications · 1.1K citations

    18

    h-index

  2. DG
    Darrell G. Schlom

    Cornell University, United States

    18 publications · 1.3K citations

    17

    h-index

  3. LB
    L. Bellaïche

    University of Arkansas at Fayetteville, United States

    16 publications · 1.4K citations

    15

    h-index

  4. QX
    Q. X. Jia

    Los Alamos National Laboratory, United States

    13 publications · 909 citations

    13

    h-index

  5. JF
    J. Fontcuberta

    Institut de Ciència de Materials de Barcelona, Spain

    13 publications · 577 citations

    13

    h-index

1–5 of 6.3K

Venues

  1. Applied Physics Letters

    329 publications · 15.9K citations

    65

    h-index

  2. Journal of Applied Physics

    237 publications · 9.2K citations

    48

    h-index

  3. Physical Review Letters

    PRL · 53 publications · 8.4K citations

    41

    h-index

  4. Physical review. B, Condensed matter

    PRB · 75 publications · 4.2K citations

    36

    h-index

  5. Physical Review B

    PRB · 48 publications · 2.5K citations

    26

    h-index

1–5