2002 · 28 citations · 2 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesComplementary Metal-oxide-semiconductor TechnologyHigh-frequency Semiconductor DevicesIntegrated Circuit DesignIntegrated Circuit DevicesIntegrated Circuit FabricationRadio-frequency Integrated CircuitsBicmos TechnologyHigh-frequency ElectronicsMillimeter-wave Integrated CircuitsMonolithic Microwave Integrated CircuitsRadio-frequency Integrated Circuit DesignRf Cmos DesignSige Bicmos DesignSilicon Germanium Bipolar Transistor
A low complexity 0.35 /spl mu/m SiGe HBT technology, using a quasi self-aligned emitter/base structure on a non-selective Si/SiGe epitaxial base, is described. Excellent high frequency performances (f/sub max/ up to 71 GHz) are obtained, opening the way to a highly manufacturable SiGe BiCMOS technology.
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130-GHz f/sub T/ SiGe HBT technology
Katsuya Oda, E. Ohue, M. Tanabe et al. · 2002 · 66 citations