Publication | Closed Access
A high performance low complexity SiGe HBT for BiCMOS integration
28
Citations
2
References
2002
Year
Unknown Venue
EngineeringVlsi DesignDevice IntegrationComputer ArchitectureCircuit SystemRf SemiconductorElectronic EngineeringMixed-signal Integrated CircuitElectrical EngineeringPhysicsHigh-frequency DeviceComputer EngineeringLow Complexity 0.35MicroelectronicsMicrowave EngineeringNatural SciencesBicmos IntegrationParticle PhysicsApplied Physics
A low complexity 0.35 /spl mu/m SiGe HBT technology, using a quasi self-aligned emitter/base structure on a non-selective Si/SiGe epitaxial base, is described. Excellent high frequency performances (f/sub max/ up to 71 GHz) are obtained, opening the way to a highly manufacturable SiGe BiCMOS technology.
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