Publication | Closed Access
BiCMOS6G: a high performance 0.35 μm SiGe BiCMOS technology for wireless applications
28
Citations
1
References
2003
Year
Unknown Venue
Low-power ElectronicsGhz F/sub Max/Electrical EngineeringMillimeter Wave TechnologyEngineeringDevice IntegrationHigh-frequency DeviceMixed-signal Integrated CircuitHigh Performance 0.35Mm 0.35Computer EngineeringStand-alone CmosIntegrated CircuitsWireless ApplicationsMicroelectronicsRf Subsystem
BiCMOS6G, a 200 mm 0.35 /spl mu/m SiGe BiCMOS technology, is presented. This technology features a low complexity double-poly SiGe HBT with 60 GHz f/sub max/, added to stand-alone CMOS and high-quality passive components. It is ideally suited to the development of highly integrated wireless communications circuits.
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