D. Céli

A 55 nm triple gate oxide 9 metal layers SiGe BiCMOS technology featuring 320 GHz f<inf>T</inf> / 370 GHz f<inf>MAX</inf> HBT and high-Q millimeter-wave passives

P. Chevalier, G. Avenier, G. Ribes et al. · 2014 · 171 citations

Low-power Electronics, Electrical Engineering, Millimeter Wave Technology +15

230-GHz self-aligned SiGeC HBT for optical and millimeter-wave applications

P. Chevalier, C. Fellous, Laurent Rubaldo et al. · IEEE Journal of Solid-State Circuits · 2005 · 62 citations

Photonics, Electrical Engineering, Millimeter Wave Technology +13

A conventional double-polysilicon FSA-SEG Si/SiGe:C HBT reaching 400 GHz f<inf>MAX</inf>

P. Chevalier, F. Pourchon, Thomas Lacave et al. · 2009 · 58 citations

Electrical Characteristics, Technological Optimization Strategy, Electrical Engineering +12

Scaling of SiGe BiCMOS Technologies for Applications above 100 GHz

P. Chevalier, Thomas Lacave, E. Canderle et al. · 2012 · 40 citations

Electrical Engineering, Millimeter Wave Technology, Engineering +14

Dimension scaling of 1/f noise in the base current of quasiself-aligned polysilicon emitter bipolar junction transistors

P. Llinarès, D. Céli, O. Roux-dit-Buisson et al. · Journal of Applied Physics · 1997 · 39 citations

Experimental Results, Electrical Engineering, Engineering +11