A 55 nm triple gate oxide 9 metal layers SiGe BiCMOS technology featuring 320 GHz f<inf>T</inf> / 370 GHz f<inf>MAX</inf> HBT and high-Q millimeter-wave passives

P. Chevalier, G. Avenier, G. Ribes, +43

Low-power ElectronicsElectrical EngineeringMillimeter Wave TechnologyEngineeringVlsi Design +13

230-GHz self-aligned SiGeC HBT for optical and millimeter-wave applications

P. Chevalier, C. Fellous, Laurent Rubaldo, +14

IEEE Journal of Solid-State Circuits

PhotonicsElectrical EngineeringMillimeter Wave TechnologySelective Epitaxial GrowthEngineering +11

A conventional double-polysilicon FSA-SEG Si/SiGe:C HBT reaching 400 GHz f<inf>MAX</inf>

P. Chevalier, F. Pourchon, Thomas Lacave, +9

Electrical CharacteristicsTechnological Optimization StrategyElectrical EngineeringMillimeter Wave TechnologyEngineering +10

Scaling of SiGe BiCMOS Technologies for Applications above 100 GHz

P. Chevalier, Thomas Lacave, E. Canderle, +15

Electrical EngineeringMillimeter Wave TechnologyEngineeringRf SemiconductorD Band +12

Dimension scaling of 1/f noise in the base current of quasiself-aligned polysilicon emitter bipolar junction transistors

P. Llinarès, D. Céli, O. Roux-dit-Buisson, +2

Journal of Applied Physics

Experimental ResultsElectrical EngineeringEngineeringPhysicsNanoelectronics +9

Characterization and Modeling of an SiGe HBT Technology for Transceiver Applications in the 100–300-GHz Range

Sorin P. Voinigescu, Eric Dacquay, Valerio Adinolfi, +5

IEEE Transactions on Microwave Theory and Techniques

Device ModelingElectrical EngineeringMillimeter Wave TechnologyEngineeringMicrowave Device Modeling +13

Impact of layout and technology parameters on the thermal resistance of SiGe:C HBTs

Vincenzo d’Alessandro, I Marano, Salvatore Russo, +5

EngineeringC HbtsSilicon On InsulatorInterconnect (Integrated Circuits)Semiconductor Device +17

A computationally efficient physics-based compact bipolar transistor model for circuit Design-part II: parameter extraction and experimental results

Sébastien Frégonèse, Steffen Lehmann, Thomas Zimmer, +6

IEEE Transactions on Electron Devices

EngineeringPower ElectronicsComputational MechanicsPhysical Design (Electronics)Numerical Simulation +18

State-of-the-art and future perspectives in calibration and de-embedding techniques for characterization of advanced SiGe HBTs featuring sub-THz f<inf>T</inf>/f<inf>MAX</inf>

N. Derrier, Andrej Rumiantsev, D. Céli

EngineeringRadio FrequencyMeasurementEducationElectromagnetic Compatibility +19

HICUM/2 v2.3 parameter extraction for advanced SiGe-heterojunction bipolar transistors

Andreas Pawlak, M. Schröter, J. Krause, +2

Device ModelingElectrical EngineeringEngineeringRf SemiconductorNanoelectronics +8