P. Llinarès

A high-speed low 1/f noise SiGe HBT technology using epitaxially-aligned polysilicon emitters

S. Jouan, R. Planche, H. Baudry et al. · IEEE Transactions on Electron Devices · 1999 · 55 citations

Electrical Engineering, Engineering, High-speed Low 1/F +11

Dimension scaling of 1/f noise in the base current of quasiself-aligned polysilicon emitter bipolar junction transistors

P. Llinarès, D. Céli, O. Roux-dit-Buisson et al. · Journal of Applied Physics · 1997 · 39 citations

Experimental Results, Electrical Engineering, Engineering +11

Effects of body biasing on the low frequency noise of MOSFETs from a 130 nm CMOS technology

M. Marin, M. Jamal Deen, M. de Murcia et al. · IEE Proceedings - Circuits Devices and Systems · 2004 · 29 citations

Impact of grain number fluctuations in the MOS transistor gate on matching performance

R. Difrenza, J.C. Vildeuil, P. Llinarès et al. · 2003 · 26 citations

Device Modeling, Electrical Engineering, Engineering +13

0.25 μm fully depleted SOI MOSFETs for RF mixed analog-digital circuits, including a comparison with partially depleted devices with relation to high frequency noise parameters

M. Vanmackelberg, C. Raynaud, O. Faynot et al. · Solid-State Electronics · 2002 · 20 citations

Low-power Electronics, Electrical Engineering, Engineering +5