P. Llinarès - Concepedia

Author

P. Llinarès

STMicroelectronics (France)

Also Known As

P Llinares, P. LLINARES, P. Llinares, P. Llinarès, Pierre Llinares

Publications

423

Citations

H-Index

Concepts

All Affiliations

STMicroelectronics (France)Centre National de la Recherche Scientifique Université de Montpellier Orange (France)Institut de Microélectronique, Electromagnétisme et Photonique

About

P. Llinarès is an author at STMicroelectronics (France) specializing in engineering, electrical engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	14	17	346
2	Electrical Engineering	14	17	346
3	Applied Physics	10	10	239
4	Computer Engineering	2	2	32
5	Education	1	1	18

P. Llinarès

Publications

387

Citations

H-Index

Page 1

	Year	Citations
A high-speed low 1/f noise SiGe HBT technology using epitaxially-aligned polysilicon emitters S. Jouan, R. Planche, H. Baudry, IEEE Transactions on Electron Devices Electrical EngineeringEngineeringHigh-speed Low 1/FRf SemiconductorHigh-frequency Device	1999	55
Dimension scaling of 1/f noise in the base current of quasiself-aligned polysilicon emitter bipolar junction transistors P. Llinarès, D. Céli, O. Roux-dit-Buisson, Journal of Applied Physics Experimental ResultsElectrical EngineeringEngineeringPhysicsNanoelectronics	1997	39
Effects of body biasing on the low frequency noise of MOSFETs from a 130 nm CMOS technology M. Marin, M. Jamal Deen, M. de Murcia, IEE Proceedings - Circuits Devices and Systems	2004	29
Impact of grain number fluctuations in the MOS transistor gate on matching performance R. Difrenza, J.C. Vildeuil, P. Llinarès, Device ModelingElectrical EngineeringEngineeringVlsi DesignPhysics	2003	26
0.25 μm fully depleted SOI MOSFETs for RF mixed analog-digital circuits, including a comparison with partially depleted devices with relation to high frequency noise parameters M. Vanmackelberg, C. Raynaud, O. Faynot, Solid-State Electronics Low-power ElectronicsElectrical EngineeringEngineeringRf SemiconductorMixed-signal Integrated Circuit	2002	20
The impact of short channel and quantum effects on the MOS transistor mismatch R. Difrenza, P. Llinarès, G. Ghibaudo Solid-State Electronics Mos Transistor MismatchQuantum ScienceElectrical EngineeringEngineeringPhysics	2003	20
On noise sources in hot electron-degraded bipolar junction transistors P. Llinarès, G. Ghibaudo, J. A. Chroboczek Journal of Applied Physics Electrical EngineeringEngineeringPhysicsNoise SourcesNanoelectronics	1997	19
Impact of pocket implant on MOSFET mismatch for advanced CMOS technology J. Mc Ginley, O. Noblanc, C. Julien, Pocket ImplantElectrical EngineeringSemiconductor DeviceEngineeringVlsi Design	2004	19
Low frequency noise characterization in 0.13 μm p-MOSFETs. Impact of scaled-down 0.25, 0.18 and 0.13 μm technologies on 1/f noise M. Marin, Y. Akue Allogo, M. de Murcia, Microelectronics Reliability Low-power ElectronicsElectrical EngineeringμM TechnologiesScaled-down 0.25Engineering	2004	18
1/f noise in 0.18 μm technology n-MOSFETs from subthreshold to saturation Y. Akue Allogo, M. Marin, M. de Murcia, Solid-State Electronics Electrical EngineeringEngineeringElectronic EngineeringBias Temperature InstabilityApplied Physics	2002	18

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