M. de Murcia - Concepedia

Author

M. de Murcia

Institut d'Électronique et des Systèmes

Also Known As

M De Murcia, M de Murcia, M. DE MURCIA, M. De Murcia, M. de MURCIA, M. de Murcia, Mario de Murcia

Publications

806

Citations

H-Index

Concepts

All Affiliations

Institut d'Électronique et des Systèmes Université de Montpellier STMicroelectronics (France)Centre National de la Recherche Scientifique

About

M. de Murcia is an author at Institut d'Électronique et des Systèmes specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	12	14	624
2	Applied Physics	11	12	595
3	Electrical Engineering	6	6	110
4	Chemistry	5	5	466
5	Natural Sciences	4	4	70

M. de Murcia

Publications

653

Citations

H-Index

Page 1

	Year	Citations
Optical and electrical properties of SnO2 thin films in relation to their stoichiometric deviation and their crystalline structure J.-C. Manifacier, M. de Murcia, J.P. Fillard, Thin Solid Films Materials ScienceSno2 Thin FilmsIi-vi SemiconductorOptical MaterialsEngineering	1977	396
Effects of body biasing on the low frequency noise of MOSFETs from a 130 nm CMOS technology M. Marin, M. Jamal Deen, M. de Murcia, IEE Proceedings - Circuits Devices and Systems	2004	29
Optical study of Eu<sup>3+</sup>centres in CdF<sub>2</sub> J.P. Jouart, C. Bissieux, M. Egée, Journal of Physics C Solid State Physics C2v CentreOptical MaterialsEngineeringPhysicsCubic Centre	1981	27
Diffusion and noise in GaAs material and devices M. de Murcia, D. Gasquet, Abdelkébir Elamri, IEEE Transactions on Electron Devices SemiconductorsWide-bandgap SemiconductorElectrical EngineeringSemiconductor TechnologyEngineering	1991	25
Low-temperature photoluminescence in SnO2 high-resistivity monocrystals J.P. Fillard, M. de Murcia physica status solidi (a) Optical MaterialsEngineeringStannic Oxide MonocrystalsChemistryLuminescence Property	1975	20
A specific trap level at 78 meV in undoped liquid encapsulated Czochralski grown GaAs–SI materials J.P. Fillard, M. Castagné, J. Bonnafé, Journal of Applied Physics Specific Trap LevelEngineeringUndoped LiquidCurrent PeakSemiconductor Device	1983	20
Low frequency noise characterization in 0.13 μm p-MOSFETs. Impact of scaled-down 0.25, 0.18 and 0.13 μm technologies on 1/f noise M. Marin, Y. Akue Allogo, M. de Murcia, Microelectronics Reliability Low-power ElectronicsElectrical EngineeringμM TechnologiesScaled-down 0.25Engineering	2004	18
Transport parameters of hot electrons in GaAs at 300 K D. Gasquet, M. de Murcia, J. P. Nougier, Physica B+C SemiconductorsWide-bandgap SemiconductorElectrical EngineeringTransport ParametersEngineering	1985	18
1/f noise in 0.18 μm technology n-MOSFETs from subthreshold to saturation Y. Akue Allogo, M. Marin, M. de Murcia, Solid-State Electronics Electrical EngineeringEngineeringElectronic EngineeringBias Temperature InstabilityApplied Physics	2002	18
Luminescence centers in SnO2 single crystals M. de Murcia, M. Egée, J.P. Fillard Journal of Physics and Chemistry of Solids PhotoluminescenceLuminescence CentersEngineeringOptical PropertiesApplied Physics	1978	17

Page 1