M. Marin

High immunity to threshold voltage variability in undoped ultra-thin FDSOI MOSFETs and its physical understanding

O. Weber, O. Faynot, F. Andrieu et al. · 2008 · 159 citations

Device Modeling, Semiconductor Technology, Electrical Engineering +14

FDSOI devices with thin BOX and ground plane integration for 32nm node and below

C. Fenouillet-Béranger, S. Denorme, P. Perreau et al. · Solid-State Electronics · 2009 · 130 citations

3D Ic Architecture, Electrical Engineering, Engineering +12

FDSOI devices with thin BOX and ground plane integration for 32nm node and below

C. Fenouillet-Béranger, S. Denorme, P. Perreau et al. · 2008 · 39 citations

Engineering, Vlsi Design, Thin Box +20

Effects of body biasing on the low frequency noise of MOSFETs from a 130 nm CMOS technology

M. Marin, M. Jamal Deen, M. de Murcia et al. · IEE Proceedings - Circuits Devices and Systems · 2004 · 29 citations

Low frequency noise characterization in 0.13 μm p-MOSFETs. Impact of scaled-down 0.25, 0.18 and 0.13 μm technologies on 1/f noise

M. Marin, Y. Akue Allogo, M. de Murcia et al. · Microelectronics Reliability · 2004 · 18 citations

Low-power Electronics, Electrical Engineering, μM Technologies +6