J.C. Vildeuil

A thorough investigation of progressive breakdown in ultra-thin oxides. Physical understanding and application for industrial reliability assessment

F. Monsieur, Emmanuel Vincent, D. Roy et al. · 2003 · 118 citations

Engineering, Electrical Engineering, Materials Science +17

Impact of Random Telegraph Signal in CMOS Image Sensors for Low-Light Levels

C. Leyris, F. Mart́ınez, M. Valenza et al. · Proceedings of ESSCIRC · 2006 · 65 citations

Engineering, Computer Engineering, Electrical Engineering +17

N-MOSFET oxide trap characterization induced by nitridation process using RTS noise analysis

C. Leyris, F. Mart́ınez, A. Hoffmann et al. · Microelectronics Reliability · 2006 · 38 citations

Engineering, Electrical Engineering, Microelectronics +14

Effects of body biasing on the low frequency noise of MOSFETs from a 130 nm CMOS technology

M. Marin, M. Jamal Deen, M. de Murcia et al. · IEE Proceedings - Circuits Devices and Systems · 2004 · 29 citations

Engineering, Electrical Engineering, Circuit Theory +16

Impact of grain number fluctuations in the MOS transistor gate on matching performance

R. Difrenza, J.C. Vildeuil, P. Llinarès et al. · 2003 · 26 citations

Engineering, Electrical Engineering, Microelectronics +16