A conventional double-polysilicon FSA-SEG Si/SiGe:C HBT reaching 400 GHz f<inf>MAX</inf>

Abstract

This paper summarizes the work carried out to improve performances of a conventional double-polysilicon FSA-SEG SiGe:C HBT towards 400 GHz f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">MAX</sub> . The technological optimization strategy is discussed and electrical characteristics are presented. A record peak f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">MAX</sub> of 423 GHz (f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> = 273 GHz) is demonstrated in SiGe:C HBT technology.