M. Buczkó

A 55 nm triple gate oxide 9 metal layers SiGe BiCMOS technology featuring 320 GHz f<inf>T</inf> / 370 GHz f<inf>MAX</inf> HBT and high-Q millimeter-wave passives

P. Chevalier, G. Avenier, G. Ribes et al. · 2014 · 173 citations

Engineering, Electrical Engineering, Microelectronics +15

0.13 $\mu$m SiGe BiCMOS Technology Fully Dedicated to mm-Wave Applications

G. Avenier, Malick Diop, P. Chevalier et al. · IEEE Journal of Solid-State Circuits · 2009 · 139 citations

Engineering, Electrical Engineering, Microelectronics +13

Radiative capture cross sections for 14.7 MeV neutrons

J. Csikai, G. Pető, M. Buczkó et al. · Nuclear Physics A · 1967 · 71 citations

Natural Sciences, Nuclear Engineering, Physics +11

A conventional double-polysilicon FSA-SEG Si/SiGe:C HBT reaching 400 GHz f<inf>MAX</inf>

P. Chevalier, F. Pourchon, Thomas Lacave et al. · 2009 · 58 citations

Engineering, Electrical Engineering, Microelectronics +11

0.13μm SiGe BiCMOS technology for mm-wave applications

G. Avenier, P. Chevalier, G. Troillard et al. · 2008 · 52 citations

Engineering, Electrical Engineering, Microelectronics +13