HICUM/2 v2.3 parameter extraction for advanced SiGe-heterojunction bipolar transistors

Abstract

This paper presents extraction methodologies for advanced SiGe heterojunction bipolar transistors (HBTs). Demonstrated methods focus on extracting the transfer current related parameters over a large temperature range for the new version 2.3 of the compact HBT model HICUM Level 2. Also shown are the limitations of existing extraction methods. Results for DC and AC characteristics are shown for different temperatures.