Thomas Quémerais

A 55 nm triple gate oxide 9 metal layers SiGe BiCMOS technology featuring 320 GHz f<inf>T</inf> / 370 GHz f<inf>MAX</inf> HBT and high-Q millimeter-wave passives

P. Chevalier, G. Avenier, G. Ribes et al. · 2014 · 173 citations

Engineering, Electrical Engineering, Microelectronics +15

A multi-wavelength 3D-compatible silicon photonics platform on 300mm SOI wafers for 25Gb/s applications

S. Crémer, Nathalie Vulliet, Thierry Pinguet et al. · 2013 · 95 citations

Engineering, Electrical Engineering, Optoelectronics +16

Hot-Carrier Stress Effect on a CMOS 65-nm 60-GHz One-Stage Power Amplifier

Thomas Quémerais, L. Moquillon, Vincent Huard et al. · IEEE Electron Device Letters · 2010 · 30 citations

Engineering, Electrical Engineering, Microelectronics +16

High-Q MOS Varactors for Millimeter-Wave Applications in CMOS 28-nm FDSOI

Thomas Quémerais, D. Gloria, Dominique Golanski et al. · IEEE Electron Device Letters · 2014 · 29 citations

Engineering, Electrical Engineering, Microelectronics +16

A CMOS class-A 65nm power amplifier for 60 GHz applications

Thomas Quémerais, L. Moquillon, Sébastien Pruvost et al. · 2010 · 23 citations

Engineering, Electrical Engineering, Microelectronics +16