Dominique Golanski

28nm FDSOI technology platform for high-speed low-voltage digital applications

N. Planes, O. Weber, V. Barral et al. · 2012 · 424 citations

Engineering, Computer Engineering, Electrical Engineering +16

Industrialised SPAD in 40 nm technology

Sara Pellegrini, B. Rae, A. Pingault et al. · 2017 · 57 citations

Engineering, Electrical Engineering, Materials Science +10

Low frequency noise variability in high-k/metal gate stack 28nm bulk and FD-SOI CMOS transistors

E.G. Ioannidis, S. Haendler, A. Bajolet et al. · 2011 · 45 citations

Engineering, Computer Engineering, Electrical Engineering +17

First demonstration of a full 28nm high-k/metal gate circuit transfer from Bulk to UTBB FDSOI technology through hybrid integration

Dominique Golanski, P. Fonteneau, C. Fenouillet-Béranger et al. · 2013 · 31 citations

Engineering, Computer Engineering, Electrical Engineering +14

High-Q MOS Varactors for Millimeter-Wave Applications in CMOS 28-nm FDSOI

Thomas Quémerais, D. Gloria, Dominique Golanski et al. · IEEE Electron Device Letters · 2014 · 29 citations

Engineering, Electrical Engineering, Microelectronics +16