V. Barral

28nm FDSOI technology platform for high-speed low-voltage digital applications

N. Planes, O. Weber, V. Barral et al. · 2012 · 424 citations

Engineering, Computer Engineering, Electrical Engineering +16

Cryogenic Subthreshold Swing Saturation in FD-SOI MOSFETs Described With Band Broadening

Heorhii Bohuslavskyi, A. G. M. Jansen, Sylvain Barraud et al. · IEEE Electron Device Letters · 2019 · 147 citations · Full text

Engineering, Electrical Engineering, Microelectronics +16

Truly Innovative 28nm FDSOI Technology for Automotive Micro-Controller Applications embedding 16MB Phase Change Memory

F. Arnaud, P. Zuliani, J.-P. Reynard et al. · 2018 · 74 citations

Engineering, Computer Engineering, Electrical Engineering +16

Assessment of 28 nm UTBB FD-SOI technology platform for RF applications: Figures of merit and effect of parasitic elements

Babak Kazemi Esfeh, Valeriya Kilchytska, V. Barral et al. · Solid-State Electronics · 2015 · 51 citations

Engineering, Computer Engineering, Electrical Engineering +16

Strained FDSOI CMOS technology scalability down to 2.5nm film thickness and 18nm gate length with a TiN/HfO<inf>2</inf> gate stack

V. Barral, T. Poiroux, F. Andrieu et al. · 2007 · 47 citations

Engineering, Electrical Engineering, Materials Science +17