J.-P. Reynard - Concepedia

Author

J.-P. Reynard

Also Known As

J. P. Reynard, J.-P Reynard, J.-P. Reynard, J.-Ph. Reynard, J.P Reynard, J.P. Reynard, JP. Reynard, Jp. Reynard, Reynard, J -P.

Publications

335

Citations

H-Index

Concepts

All Affiliations

STMicroelectronics (France)Commissariat à l'Énergie Atomique et aux Énergies Alternatives Laboratoire d'Électronique des Technologies de l'Information STMicroelectronics (Italy)Université Grenoble Alpes

About

J.-P. Reynard is an author at STMicroelectronics (France) specializing in engineering, microelectronics, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	10	10	294
2	Applied Physics	7	7	151
3	Electrical Engineering	7	7	242
4	Computer Engineering	3	3	143
5	Chemical Engineering	1	1	20

J.-P. Reynard

Publications

306

Citations

H-Index

Page 1

	Year	Citations
Truly Innovative 28nm FDSOI Technology for Automotive Micro-Controller Applications embedding 16MB Phase Change Memory F. Arnaud, P. Zuliani, J.-P. Reynard, Non-volatile MemoryElectrical EngineeringEngineeringVlsi DesignEmerging Memory Technology	2018	72
High Density Embedded PCM Cell in 28nm FDSOI Technology for Automotive Micro-Controller Applications F. Arnaud, Paulo Ferreira, F. Piazza, 3D Ic ArchitectureElectrical EngineeringEngineeringVlsi DesignHigh-speed Electronics	2020	47
Fully Optimized Cu based process with dedicated cavity etch for 1.75&amp;#x003BC;m and 1.45&amp;#x003BC;m pixel pitch CMOS Image Sensors Muriel Cohen, F. Roy, Didier Hérault, Electrical EngineeringWafer Scale ProcessingEngineeringMicrofabricationMixed-signal Integrated Circuit	2006	45
Integration of fluorine-doped silicon oxide in copper pilot line for 0.12-μm technology J.-P. Reynard, C. Vérove, E. Sabouret, Microelectronic Engineering Materials Engineering0.12-μM TechnologyElectrical EngineeringEngineeringOxide Electronics	2002	28
Low cost 65nm CMOS platform for Low Power &amp; General Purpose applications F. Arnaud, B. Duriez, B. Tavel, Low-power ElectronicsLow PowerElectrical EngineeringAnalog Transistor ParametersVlsi Design	2004	24
Advanced characterizations of fluorine-free tungsten film and its application as low resistance liner for PCRAM Philippe Rodriguez, R. Famulok, Y. Le Friec, Materials Science in Semiconductor Processing Materials EngineeringMaterials ScienceChemical EngineeringEngineeringSurface Science	2017	20
Study of dynamical formation and shape of microlenses formed by the reflow method Stéphanie Audran, B. Faure, B. Mortini, Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE Colloidal MaterialEngineeringMicrolenses ArraysMicro-optical ComponentSoft Matter	2006	19
Integration of a 3 level Cu-SiO/sub 2/ air gap interconnect for sub 0.1 micron CMOS technologies V. Arnal, J. Torrès, Philippe Gayet, EngineeringDevice IntegrationSilicon On InsulatorInterconnect (Integrated Circuits)Advanced Packaging (Semiconductors)	2001	15
USJ formation using pulsed plasma doping J.T. Scheuer, D. Lenoble, J.-P. Reynard, Surface and Coatings Technology EngineeringPhysicsApplied PhysicsPlasma SciencePlasma Physics	2004	13
BEOL Process Effects on ePCM Reliability Andrea Redaelli, A. Gandolfo, G. Samanni, IEEE Journal of the Electron Devices Society	2022	12

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