C. Vérove

Unbiased line width roughness measurements with critical dimension scanning electron microscopy and critical dimension atomic force microscopy

L. Azarnouche, E. Pargon, K. Menguelti et al. · Journal of Applied Physics · 2012 · 49 citations

Engineering, Measurement, Microscopy +19

Integration of fluorine-doped silicon oxide in copper pilot line for 0.12-μm technology

J.-P. Reynard, C. Vérove, E. Sabouret et al. · Microelectronic Engineering · 2002 · 28 citations

Materials Engineering, 0.12-μM Technology, Electrical Engineering +10

Residue growth on metallic-hard mask after dielectric etching in fluorocarbon-based plasmas. I. Mechanisms

N. Possémé, T. Chevolleau, R. Bouyssou et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 2010 · 18 citations

Materials Science, Chemical Engineering, Fluorocarbon Etching +15

Demonstration of an extendable and industrial 300mm BEOL integration for the 65-mn technology node

O. Hinsinger, Robert Fox, E. Sabouret et al. · 2005 · 15 citations

65-Mn Technology Node, Electrical Engineering, Physical Design (Electronics) +14

Integration of a 3 level Cu-SiO/sub 2/ air gap interconnect for sub 0.1 micron CMOS technologies

V. Arnal, J. Torrès, Philippe Gayet et al. · 2001 · 15 citations

Engineering, Device Integration, Silicon On Insulator +17