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Demonstration of an extendable and industrial 300mm BEOL integration for the 65-mn technology node
15
Citations
2
References
2005
Year
Unknown Venue
65-Mn Technology NodeElectrical EngineeringPhysical Design (Electronics)EngineeringVlsi DesignIndustrial 300MmBeol Design RulesNanoelectronicsBeol IntegrationDevice IntegrationAdvanced Packaging (Semiconductors)Computer EngineeringComputer ArchitectureRc Scaling RequirementsElectronic PackagingProcess ArchitectureMicroelectronics
Given the much discussed challenges of interconnect scaling at the 65-nm node, the choice of process architecture is a key determinant of performance and extendibility. An alternate trench-first with hardmask integration is described in this work, including subsequent benefits. BEOL design rules are detailed for the 65-nm architecture, supporting both "low-k" and "ultra-low-k" backends, satisfying RC scaling requirements. Electrical parametric performance and yield are presented for a fully-integrated 300mm backend utilizing 65-nm design rules demonstrating the viability of this architecture for the 65-nm node and beyond.
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