P. Brun

Statistics

Publications

Citations

463

H-Index

Active since

1993

Affiliations

Commissariat à l'Énergie Atomique et aux Énergies Alternatives(Current)

STMicroelectronics (France)

Laboratoire d'Électronique des Technologies de l'Information

CEA Grenoble

Institut polytechnique de Grenoble

P. Brun is an author at Commissariat à l'Énergie Atomique et aux Énergies Alternatives specializing in engineering, semiconductor devices, and microelectronics.

Publications per year

1993–2014

Publications

A 55 nm triple gate oxide 9 metal layers SiGe BiCMOS technology featuring 320 GHz f<inf>T</inf> / 370 GHz f<inf>MAX</inf> HBT and high-Q millimeter-wave passives

P. Chevalier, G. Avenier, G. Ribes et al. · 2014 · 173 citations

Engineering, Electrical Engineering, Microelectronics +15

14nm FDSOI technology for high speed and energy efficient applications

O. Weber, E. Josse, F. Andrieu et al. · 2014 · 89 citations

Engineering, Computer Engineering, Electrical Engineering +15

Fully-depleted SOI technology using high-k and single-metal gate for 32 nm node LSTP applications featuring 0.179 μm<sup>2</sup> 6T-SRAM bitcell

C. Fenouillet-Béranger, J. Todeschini, Jean-Christophe Le-Denmat et al. · 2007 · 61 citations

Engineering, Computer Engineering, Electrical Engineering +15

O 1s investigation of SiO2/Si interface formation using an alkali metal promoter

M. Riehl-Chudoba, S. Nishigaki, Yves Huttel et al. · Applied Surface Science · 1993 · 25 citations

Natural Sciences, Materials Engineering, Materials Science +16

High performance k=2.5 ULK backend solution using an improved TFHM architecture, extendible to the 45nm technology node

Robert Fox, O. Hinsinger, E. Richard et al. · 2006 · 18 citations

Engineering, Electrical Engineering, Electronic Materials +6

1–5 of 12