High performance k=2.5 ULK backend solution using an improved TFHM architecture, extendible to the 45nm technology node

Abstract

An enhanced trench first hard mask (TFHM) backend integration architecture has been developed to facilitate straightforward ultra low-k (ULK) material insertion and to enable rapid yield learning at the 65nm technology node. Parametric, yield, reliability, and RC performance data are presented for the fully-integrated, improved TFHM 300mm ULK backend