Fully Optimized Cu based process with dedicated cavity etch for 1.75μm and 1.45μm pixel pitch CMOS Image Sensors

Abstract

An innovative process development for sub-2μm CMOS imager sensors is described, leading to tremendous improvements on main pixel parameters like conversion gain, saturation charge, sensitivity, dark current and noise. A full 3MP demonstrator with 1.75μm pixel pitch and 1.45μm pixel pitch have been successfully designed, fabricated and characterized.