2018 · 74 citations · 5 references
EngineeringComputer EngineeringElectrical EngineeringAutomotive ElectronicsMicroelectronicsSemiconductor DevicesCmos Circuit DesignEmbedded Memory BlocksIntegrated Circuit DesignMemory DevicesNanoelectronicsBit Error RateEmbedded Memory IntegrationFully Depleted Silicon-on-insulator ScalingFully Depleted Silicon-on-insulator TransistorsMemory Array ArchitectureMemory Circuit DesignNon-volatile Memory DesignPhase-change Memory
For the first time we propose a 28nm FDSOI e-NVM solution for automotive micro-controller applications using a Phase Change Memory (PCM) based on chalcogenide ternary material. A complete array organization is described exploiting body biasing capability of Fully Depleted Silicon On Insulator (FDSOI) transistors. Leveraging triple gate oxide integration with high-k metal gate (HKMG) stack, a true 5V transistor with high analog performance has been demonstrated. Reliable PCM 0,036um <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> analytical cell with 2 decades programming window after 1 Million of cycles has been demonstrated. Finally, current distributions based on a fully integrated 16MB macro-cell is presented achieving Bit Error Rate (BER) <; 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-8</sup> after multiple bakes at 150°C and 10k cycling of code storage memory.
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28nm FDSOI technology platform for high-speed low-voltage digital applications
N. Planes, O. Weber, V. Barral et al. · 2012 · 424 citations
Engineering, Computer Engineering, Electrical Engineering +16
Chalcogenide PCM: a memory technology for next decade
Roberto Bez · 2009 · 99 citations