Concepedia

Publication | Closed Access

Ultra-thin-body and BOX (UTBB) fully depleted (FD) device integration for 22nm node and beyond

DOI

79

Citations

0

References

2010

Year

Qijiong Liu, A. Yagishita, N. Loubet, A. Khakifirooz, P. Kulkarni, Tsuyoshi Yamamoto, Kangguo Cheng, M. Fujiwara, J. Cai, D. Dorman,

Unknown Venue

Abstract

We present UTBB devices with a gate length (L <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">G</inf> ) of 25nm and competitive drive currents. The process flow features conventional gate-first high-k/metal and raised source/drains (RSD). Back bias (V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">bb</inf> ) enables V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">t</inf> modulation of more than 125mV with a V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">bb</inf> of 0.9V and BOX thickness of 12nm. This demonstrates the importance and viability of the UTBB structure for multi-V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">t</inf> and power management applications. We explore the impact of GP, BOX thickness and V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">bb</inf> on local V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">t</inf> variability for the first time. Excellent A <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Vt</inf> of 1.27 mV·µm is achieved. We also present simulations results that suggest UTBB has improved scalability, reduced gate leakage (I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">g</inf> ) and lower external resistance (R <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ext</inf> ), thanks to a thicker inversion gate dielectric (T <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">inv</inf> ) and body (T <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">si</inf> ) thickness.