A. Mocuta

Device Exploration of NanoSheet Transistors for Sub-7-nm Technology Node

Doyoung Jang, Dmitry Yakimets, Geert Eneman et al. · IEEE Transactions on Electron Devices · 2017 · 275 citations

Device Modeling, Nanowire Transistors, Electrical Engineering +13

The Complementary FET (CFET) for CMOS scaling beyond N3

Julien Ryckaert, P. Schuddinck, Pieter Weckx et al. · 2018 · 206 citations

Finfet Device, Engineering, Vlsi Design +18

Ultrathin high-K gate stacks for advanced CMOS devices

E. P. Gusev, D. A. Buchanan, E. Cartier et al. · 2002 · 195 citations

Engineering, Vlsi Design, Silicon On Insulator +16

Extreme scaling with ultra-thin Si channel MOSFETs

B. Doris, M. Ieong, T. Kanarsky et al. · 2003 · 181 citations

Electrical Engineering, Engineering, Technology Scaling +8

Characteristics and device design of sub-100 nm strained Si N- and PMOSFETs

K. Rim, J. O. Chu, H. Chen et al. · 2003 · 143 citations

Electrical Engineering, Engineering, Strained Si Devices +11