Lahir Shaik Adam

Diffusion of implanted nitrogen in silicon

Lahir Shaik Adam, Mark E. Law, K. S. Jones et al. · Journal of Applied Physics · 2000 · 39 citations

Materials Science, Semiconductor Technology, Ion Implantation +12

22 nm technology compatible fully functional 0.1 μm<sup>2</sup> 6T-SRAM cell

Bala S. Haran, A. Kumar, Lahir Shaik Adam et al. · 2008 · 32 citations

Functional 0.1, Nm Technology, Electrical Engineering +11

A 65 nm CMOS technology for mobile and digital signal processing applications

A. Chattedee, J. Yoon, Song Zhao et al. · 2005 · 22 citations

Low-power Electronics, Hardware Security, Electrical Engineering +14

Experimental identification of nitrogen-vacancy complexes in nitrogen implanted silicon

Lahir Shaik Adam, Mark E. Law, Stanislaw Szpala et al. · Applied Physics Letters · 2001 · 22 citations

Materials Science, Engineering, Physics +13

Physical integrated diffusion-oxidation model for implanted nitrogen in silicon

Lahir Shaik Adam, Mark E. Law, O. Dokumaci et al. · Journal of Applied Physics · 2002 · 14 citations

Materials Engineering, Materials Science, Electrical Engineering +14