O. Dokumaci

Extreme scaling with ultra-thin Si channel MOSFETs

B. Doris, M. Ieong, T. Kanarsky et al. · 2003 · 181 citations

Electrical Engineering, Engineering, Technology Scaling +8

Universal tunneling behavior in technologically relevant P/N junction diodes

P. M. Solomon, J. Jopling, D.J. Frank et al. · Journal of Applied Physics · 2004 · 106 citations

Device Modeling, Semiconductors, Electrical Engineering +13

FinFET performance advantage at 22nm: An AC perspective

Michael Guillorn, Josephine Chang, A. Bryant et al. · 2008 · 83 citations

Device Modeling, Electrical Engineering, Engineering +11

Two gates are better than one [double-gate MOSFET process]

P. M. Solomon, K.W. Guarini, Yifan Zhang et al. · IEEE Circuits and Devices Magazine · 2003 · 81 citations

Dense Circuit Layouts, Electrical Engineering, Physical Design (Electronics) +11

Triple-self-aligned, planar double-gate MOSFETs: devices and circuits

K.W. Guarini, P. M. Solomon, Y. Zhang et al. · 2002 · 68 citations

Electrical Engineering, Gate Undercut, Engineering +11