J.W. Weijtmans

Probing nanoscale local lattice strains in advanced Si complementary metal-oxide-semiconductor devices

Jie‐rong Huang, M. J. Kim, P.R. Chidambaram et al. · Applied Physics Letters · 2006 · 29 citations

Engineering, Electrical Engineering, Materials Science +17

High-performance nMOSFET with in-situ phosphorus-doped embedded Si:C (ISPD eSi:C) source-drain stressor

B. Frank Yang, R. Takalkar, Zhibin Ren et al. · 2008 · 24 citations

Engineering, Electrical Engineering, Materials Science +12

Morphology of quaterthiophene thin films in organic field effect transistors

W. A. Schoonveld, R. W. Stok, J.W. Weijtmans et al. · Synthetic Metals · 1997 · 24 citations

Natural Sciences, Materials Engineering, Materials Science +14

Factors Influencing the Leakage Current in Embedded SiGe Source/Drain Junctions

E. Simôen, Mireia Bargalló González, Bertrand Vissouvanadin et al. · IEEE Transactions on Electron Devices · 2008 · 10 citations

Engineering, Electrical Engineering, Materials Science +17