Applied Physics Letters · 2006 · 29 citations · 14 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsComplementary Metal-oxide-semiconductor TechnologyDevice CharacterizationMetal-oxide-semiconductor Field-effect TransistorsNanomechanicsSemiconductor Device MaterialsSemiconductor PhysicsComplementary Metal-oxide-semiconductor DevicesConvergent Beam Electron DiffractionHigh-resolution Strain MeasurementNanoscale TransistorsSemiconductor NanostructuresSilicon NitrideStrain In NanostructuresStrain Mapping
Local lattice strains in nanoscale Si complementary metal-oxide-semiconductor (MOS) transistors are directly measured by convergent beam electron diffraction (CBED). Through both high spatial resolution and high strain sensitivity of the CBED technique, compressive strains on the order of 10−3 from a p-type MOS transistor with a sub-100nm gate length are detected. One-dimensional quantitative strain mapping is demonstrated. The tensile strains from a ⟨100⟩ channel n-type MOS transistor are observed at the ⟨910⟩ zone axis. It is found that the strain increases with the thickness of the silicon nitride-capping layer, which is consistent with the device’s electrical behavior.
14
A 90-nm logic technology featuring strained-silicon
Scott E. Thompson, M Armstrong, C. Auth et al. · IEEE Transactions on Electron Devices · 2004 · 666 citations
Vincent Senez, A. Armigliato, Ingrid De Wolf et al. · Journal of Applied Physics · 2003 · 100 citations · Full text
Natural Sciences, Materials Engineering, Materials Science +17