Patrick J. Jones

35% drive current improvement from recessed-SiGe drain extensions on 37 nm gate length PMOS

P.R. Chidambaram, B. Smith, Lindsey Hall et al. · 2004 · 89 citations

Device Modeling, Electrical Engineering, Nm Gate Length +12

CMOS metal replacement gate transistors using tantalum pentoxide gate insulator

Amitava Chatterjee, R. A. Chapman, K. Joyner et al. · 2002 · 71 citations

Electrical Engineering, Engineering, Nanoelectronics +8

A high performance 0.13 μm copper BEOL technology with low-k dielectric

R. Goldblatt, B. Agarwala, M.B. Anand et al. · 2002 · 30 citations

Materials Science, Materials Engineering, Electrical Engineering +14

Probing nanoscale local lattice strains in advanced Si complementary metal-oxide-semiconductor devices

Jie‐rong Huang, M. J. Kim, P.R. Chidambaram et al. · Applied Physics Letters · 2006 · 29 citations

Materials Science, Semiconductors, Electrical Engineering +15

Processing of ultrathin wafers for power chip applications

A. Dhadda, R.K. Montgomery, Patrick J. Jones et al. · 2012 · 12 citations