R. Goldblatt

Full copper wiring in a sub-0.25 μm CMOS ULSI technology

D. Edelstein, J. Heidenreich, R. Goldblatt et al. · 2002 · 350 citations

3D Ic Architecture, Electrical Engineering, Cu Wiring +8

A 480-MHz RISC microprocessor in a 0.12-μm L/sub eff/ CMOS technology with copper interconnects

C. Akrout, Jörg Bialas, M. Canada et al. · IEEE Journal of Solid-State Circuits · 1998 · 65 citations

Engineering, Vlsi Design, Computer Architecture +16

A high performance 90nm SOI technology with 0.992 μm/sup 2/ 6T-SRAM cell

Mukesh Khare, S.H. Ku, R. A. Donaton et al. · 2003 · 43 citations

Low-power Electronics, Materials Science, Electrical Engineering +14

A high performance 0.13 μm copper BEOL technology with low-k dielectric

R. Goldblatt, B. Agarwala, M.B. Anand et al. · 2002 · 30 citations

Materials Science, Materials Engineering, Electrical Engineering +14

A high-performance sub-0.25 μm CMOS technology with multiple thresholds and copper interconnects

L.T. Su, R. Schulz, J. Adkisson et al. · 2002 · 26 citations

Low-power Electronics, Electrical Engineering, Engineering +15