R. A. Donaton

Ballistic electron emission microscopy study of barrier height inhomogeneities introduced in Au/n-Si Schottky contacts by a HF pretreatment

Christophe Detavernier, R. L. Van Meirhaeghe, R. A. Donaton et al. · Journal of Applied Physics · 1998 · 82 citations · Full text

Natural Sciences, Materials Science, Physics +17

A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications

Siddarth Krishnan, U. Kwon, N. Moumen et al. · 2011 · 81 citations

Engineering, Computer Engineering, Electrical Engineering +17

Co silicide formation on SiGeC/Si and SiGe/Si layers

R. A. Donaton, Karen Maex, A. Vantomme et al. · Applied Physics Letters · 1997 · 61 citations

Engineering, Materials Engineering, Materials Science +16

A high performance 90nm SOI technology with 0.992 μm/sup 2/ 6T-SRAM cell

Mukesh Khare, S.H. Ku, R. A. Donaton et al. · 2003 · 43 citations

Engineering, Computer Engineering, Electrical Engineering +17

CoSi 2 formation in the presence of interfacial silicon oxide

Christophe Detavernier, R.L. Van Meirhaeghe, F. Cardon et al. · Applied Physics Letters · 1999 · 35 citations

Engineering, Materials Engineering, Materials Science +17