F. Cardon - Concepedia

Author

F. Cardon

Ghent University

Also Known As

Cardon, F, Cardon, F., Cardon, Felix, F Cardon, F. CARDON, F. Cardon, Felix Cardon, Felix Cardon Felix Cardon

242

Publications

5.5K

Citations

H-Index

Concepts

All Affiliations

Ghent University Koninklijk Nederlands Genootschap voor Fysiotherapie IMEC Fudan University

About

F. Cardon is an author at Ghent University specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	35	89	4.5K
2	Applied Physics	30	73	4K
3	Chemical Engineering	11	14	303
4	Natural Sciences	3	3	71
5	Health Sciences	1	1	39

F. Cardon

105

Publications

5.1K

Citations

H-Index

Page 1

	Year	Citations
On the difference in apparent barrier height as obtained from capacitance-voltage and current-voltage-temperature measurements on Al/p-InP Schottky barriers Y.P. Song, R.L. Van Meirhaeghe, W.H. Laflère, Solid-State Electronics Electrical EngineeringSemiconductor DeviceEngineeringNanoelectronicsElectronic Engineering	1986	556
On the determination of the flat-band potential of a semiconductor in contact with a metal or an electrolyte from the Mott-Schottky plot F. Cardon, W. P. Gomes Journal of Physics D Applied Physics Ii-vi SemiconductorElectrical EngineeringSemiconductor DeviceEngineeringPhysics	1978	395
On the Interpretation of Mott‐Schottky Plots Determined at Semiconductor/Electrolyte Systems Roger De Gryse, W. P. Gomes, F. Cardon, Journal of The Electrochemical Society SemiconductorsSemiconductor TechnologyEngineeringMott‐schottky PlotsPhysics	1975	293
Barrier height inhomogeneities of epitaxial CoSi2 Schottky contacts on n-Si (100) and (111) Shiyang Zhu, R.L. Van Meirhaeghe, Christophe Detavernier, Solid-State Electronics Materials ScienceEngineeringPhysicsApplied PhysicsCondensed Matter Physics	2000	237
Electron energy levels in semiconductor electrochemistry W. P. Gomes, F. Cardon Progress in Surface Science SemiconductorsElectrical EngineeringEngineeringElectron Energy LevelsApplied Physics	1982	168
Investigation on the frequency‐dependence of the impedance of the nearly ideally polarizable semiconductor electrodes CdSe, CdS and TiO<sub>2</sub> E. C. Dutoit, R.L. Van Meirhaeghe, F. Cardon, Berichte der Bunsengesellschaft für physikalische Chemie SemiconductorsMaterials ScienceElectrical EngineeringElectronic DevicesPolarizable Semiconductor Electrodes	1975	152
Influence of defect passivation by hydrogen on the Schottky barrier height of GaAs and InP contacts R.L. Van Meirhaeghe, W.H. Laflère, F. Cardon Journal of Applied Physics Reference BarrierEngineeringInp ContactsSemiconductor DeviceSemiconductors	1994	148
Electrical characteristics of Al/SiO2/n-Si tunnel diodes with an oxide layer grown by rapid thermal oxidation Michel Depas, R.L. Van Meirhaeghe, W.H. Laflère, Solid-State Electronics Materials ScienceElectrical CharacteristicsElectrical EngineeringEngineeringRapid Thermal Oxidation	1994	133
A ballistic electron emission microscopy study of barrier height inhomogeneities introduced in Au/III-V semiconductor Schottky barrier contacts by chemical pretreatments G M Vanalme, Lieve Goubert, R.L. Van Meirhaeghe, Semiconductor Science and Technology	1999	121
A detailed XPS study of the rare earth compounds EuS and EuF3 R. Vercaemst, Dirk Poelman, L. Fiermans, Journal of Electron Spectroscopy and Related Phenomena Rare Earth MineralInorganic ChemistryEngineeringSynthetic ElementRare Metal	1995	120

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