F. Cardon

On the difference in apparent barrier height as obtained from capacitance-voltage and current-voltage-temperature measurements on Al/p-InP Schottky barriers

Y.P. Song, R.L. Van Meirhaeghe, W.H. Laflère et al. · Solid-State Electronics · 1986 · 556 citations

Electrical Engineering, Semiconductor Device, Engineering +8

On the determination of the flat-band potential of a semiconductor in contact with a metal or an electrolyte from the Mott-Schottky plot

F. Cardon, W. P. Gomes · Journal of Physics D Applied Physics · 1978 · 395 citations

Ii-vi Semiconductor, Electrical Engineering, Semiconductor Device +14

On the Interpretation of Mott‐Schottky Plots Determined at Semiconductor/Electrolyte Systems

Roger De Gryse, W. P. Gomes, F. Cardon et al. · Journal of The Electrochemical Society · 1975 · 293 citations

Semiconductors, Semiconductor Technology, Engineering +8

Barrier height inhomogeneities of epitaxial CoSi2 Schottky contacts on n-Si (100) and (111)

Shiyang Zhu, R.L. Van Meirhaeghe, Christophe Detavernier et al. · Solid-State Electronics · 2000 · 237 citations

Materials Science, Engineering, Physics +5

Electron energy levels in semiconductor electrochemistry

W. P. Gomes, F. Cardon · Progress in Surface Science · 1982 · 168 citations

Semiconductors, Electrical Engineering, Engineering +4