R.L. Van Meirhaeghe

On the difference in apparent barrier height as obtained from capacitance-voltage and current-voltage-temperature measurements on Al/p-InP Schottky barriers

Y.P. Song, R.L. Van Meirhaeghe, W.H. Laflère et al. · Solid-State Electronics · 1986 · 560 citations

Engineering, Materials Engineering, Materials Science +14

Determination of tunnelling parameters in ultra-thin oxide layer poly-Si/SiO2/Si structures

Michel Depas, Bert Vermeire, Paul Mertens et al. · Solid-State Electronics · 1995 · 261 citations

Engineering, Materials Engineering, Materials Science +8

Atomic layer deposition of TiO2 from tetrakis-dimethyl-amido titanium or Ti isopropoxide precursors and H2O

Qi Xie, Yu-Long Jiang, Christophe Detavernier et al. · Journal of Applied Physics · 2007 · 245 citations

Natural Sciences, Chemistry, Materials Science +16

Barrier height inhomogeneities of epitaxial CoSi2 Schottky contacts on n-Si (100) and (111)

Shiyang Zhu, R.L. Van Meirhaeghe, Christophe Detavernier et al. · Solid-State Electronics · 2000 · 240 citations

Engineering, Materials Science, Physics +12

Atomic layer deposition of titanium nitride from TDMAT precursor

Jan Musschoot, Qi Xie, Davy Deduytsche et al. · Microelectronic Engineering · 2008 · 173 citations

Natural Sciences, Materials Engineering, Materials Science +11