W.H. Laflère

On the difference in apparent barrier height as obtained from capacitance-voltage and current-voltage-temperature measurements on Al/p-InP Schottky barriers

Y.P. Song, R.L. Van Meirhaeghe, W.H. Laflère et al. · Solid-State Electronics · 1986 · 560 citations

Engineering, Materials Engineering, Materials Science +14

Influence of defect passivation by hydrogen on the Schottky barrier height of GaAs and InP contacts

R.L. Van Meirhaeghe, W.H. Laflère, F. Cardon · Journal of Applied Physics · 1994 · 150 citations

Engineering, Electrical Engineering, Materials Science +17

Electrical characteristics of Al/SiO2/n-Si tunnel diodes with an oxide layer grown by rapid thermal oxidation

Michel Depas, R.L. Van Meirhaeghe, W.H. Laflère et al. · Solid-State Electronics · 1994 · 134 citations

Engineering, Materials Engineering, Materials Science +17

A detailed XPS study of the rare earth compounds EuS and EuF3

R. Vercaemst, Dirk Poelman, L. Fiermans et al. · Journal of Electron Spectroscopy and Related Phenomena · 1995 · 124 citations

Natural Sciences, Chemistry, Materials Science +8

Current-voltage characteristic of Ti-<i>p</i>Si metal-oxide-semiconductor diodes

Peter Hanselaer, W.H. Laflère, R.L. Van Meirhaeghe et al. · Journal of Applied Physics · 1984 · 104 citations

Engineering, Electrical Engineering, Materials Science +17