F. Gámiz - Concepedia

Author

F. Gámiz

Also Known As

F Gamiz, F Gámiz, F. Gamiz, F. Gámiz, F. Gámiz, F. J. Gamiz, FRANCISCO GÁMIZ, Francisco Gamiz, Francisco Gámiz, Fransisco Gamiz

457

Publications

5.6K

Citations

H-Index

121

Concepts

All Affiliations

Universidad de Granada Université Grenoble Alpes Institut polytechnique de Grenoble Institut de Microélectronique, Electromagnétisme et Photonique Commissariat à l'Énergie Atomique et aux Énergies Alternatives

About

F. Gámiz is an author at Universidad de Granada specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	38	133	4.6K
2	Applied Physics	35	114	4K
3	Natural Sciences	11	11	300
4	Business	1	1	37
5	Biomedical Engineering	1	1	21

F. Gámiz

141

Publications

4.8K

Citations

H-Index

Page 1

	Year	Citations
On the enhanced electron mobility in strained-silicon inversion layers Massimo V. Fischetti, F. Gámiz, W. Hänsch Journal of Applied Physics Large EnhancementElectrical EngineeringSemiconductor DeviceStrained LayersAd Hoc Assumption	2002	229
Electron transport in strained Si inversion layers grown on SiGe-on-insulator substrates F. Gámiz, P. Cartujo, J.B. Roldán, Journal of Applied Physics Electrical EngineeringEngineeringPhysicsMonte Carlo SimulatorNanoelectronics	2002	181
Monte Carlo simulation of double-gate silicon-on-insulator inversion layers: The role of volume inversion F. Gámiz, Massimo V. Fischetti Journal of Applied Physics EngineeringSilicon On InsulatorSemiconductor DeviceSemiconductorsElectronic Devices	2001	152
Mechanical and thermal properties of graphene modified asphalt binders Fernando Moreno-Navarro, Miguel Sol-Sánchez, F. Gámiz, Construction and Building Materials Materials ScienceGraphene NanomeshesHighway PavementEngineeringMechanical Properties	2018	142
Surface roughness at the Si–SiO2 interfaces in fully depleted silicon-on-insulator inversion layers F. Gámiz, J.B. Roldán, J. A. López‐Villanueva, Journal of Applied Physics Si–sio2 InterfacesEngineeringSilicon-on-insulator Inversion LayersSilicon On InsulatorSemiconductor Device	1999	117
Physical model for trap-assisted inelastic tunneling in metal-oxide-semiconductor structures F. Jiménez-Molinos, A. Palma, F. Gámiz, Journal of Applied Physics Device ModelingElectrical EngineeringEngineeringAssisted TunnelPhysics	2001	101
A comprehensive model for Coulomb scattering in inversion layers F. Gámiz, J. A. López‐Villanueva, J. A. Jiménez-Tejada, Journal of Applied Physics EngineeringElectron DiffractionCharge TransportInversion LayersElectromagnetic Compatibility	1994	94
Direct and trap-assisted elastic tunneling through ultrathin gate oxides F. Jiménez-Molinos, F. Gámiz, A. Palma, Journal of Applied Physics Electrical EngineeringEngineeringAssisted TunnelPhysicsImage Force	2002	89
Modeling the Centroid and the Inversion Charge in Cylindrical Surrounding Gate MOSFETs, Including Quantum Effects J.B. Roldán, A. Godoy, F. Gámiz, IEEE Transactions on Electron Devices Device ModelingQuantum ScienceElectrical EngineeringCircuit SimulatorsEngineering	2008	83
A Comprehensive Study of the Corner Effects in Pi-Gate MOSFETs Including Quantum Effects Francisco G. Ruiz, Andr�s Godoy, F. Gámiz, IEEE Transactions on Electron Devices Device ModelingComprehensive StudyElectrical EngineeringElectronic DevicesEngineering	2007	82

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