F. Gámiz

On the enhanced electron mobility in strained-silicon inversion layers

Massimo V. Fischetti, F. Gámiz, W. Hänsch · Journal of Applied Physics · 2002 · 229 citations

Large Enhancement, Electrical Engineering, Semiconductor Device +13

Electron transport in strained Si inversion layers grown on SiGe-on-insulator substrates

F. Gámiz, P. Cartujo, J.B. Roldán et al. · Journal of Applied Physics · 2002 · 181 citations

Electrical Engineering, Engineering, Physics +12

Monte Carlo simulation of double-gate silicon-on-insulator inversion layers: The role of volume inversion

F. Gámiz, Massimo V. Fischetti · Journal of Applied Physics · 2001 · 152 citations

Engineering, Silicon On Insulator, Semiconductor Device +19

Mechanical and thermal properties of graphene modified asphalt binders

Fernando Moreno-Navarro, Miguel Sol-Sánchez, F. Gámiz et al. · Construction and Building Materials · 2018 · 142 citations

Materials Science, Graphene Nanomeshes, Highway Pavement +7

Surface roughness at the Si–SiO2 interfaces in fully depleted silicon-on-insulator inversion layers

F. Gámiz, J.B. Roldán, J. A. López‐Villanueva et al. · Journal of Applied Physics · 1999 · 117 citations

Si–sio2 Interfaces, Engineering, Silicon-on-insulator Inversion Layers +16