Concepedia

W. Hänsch

WH

Statistics

Publications

18

Citations

1.2K

H-Index

15

Active since

1983

Affiliations

Siemens (Germany)(Current)

Indiana University Bloomington

W. Hänsch is an author at Siemens (Germany) specializing in engineering, electrical engineering, and applied physics.

Top concepts

EngineeringElectrical EngineeringApplied PhysicsMicroelectronicsPhysicsDevice ModelingNanoelectronicsSemiconductorsTransport PhenomenaCondensed Matter Physics

Publications per year

1983–2002

18

Publications

18

On the enhanced electron mobility in strained-silicon inversion layers

Massimo V. Fischetti, F. Gámiz, W. Hänsch · Journal of Applied Physics · 2002 · 229 citations

Large Enhancement, Electrical Engineering, Semiconductor Device +13

Carrier transport near the Si/SiO2 interface of a MOSFET

W. Hänsch, Th. Vogelsang, R. Kircher et al. · Solid-State Electronics · 1989 · 204 citations

Electrical Engineering, Si/sio2 Interface, Semiconductor Device +1

The relationship between Oxide charge and device degradation: A comparative study of n- and p- channel MOSFET's

A. v. Schwerin, W. Hänsch, W. Weber · IEEE Transactions on Electron Devices · 1987 · 149 citations

Device Modeling, Electrical Engineering, Channel Mobility Degradation +13

The hot-electron problem in small semiconductor devices

W. Hänsch, M. Miura–Mattausch · Journal of Applied Physics · 1986 · 145 citations

Semiconductors, Device Modeling, Electrical Engineering +14

The evolution of the MINIMOS mobility model

S. Selberherr, W. Hänsch, M. H. Seavey et al. · Solid-State Electronics · 1990 · 97 citations

Engineering, Mobility Modeling, Numerical Simulation +4

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