W. Hänsch

On the enhanced electron mobility in strained-silicon inversion layers

Massimo V. Fischetti, F. Gámiz, W. Hänsch · Journal of Applied Physics · 2002 · 229 citations

Large Enhancement, Electrical Engineering, Semiconductor Device +13

Carrier transport near the Si/SiO2 interface of a MOSFET

W. Hänsch, Th. Vogelsang, R. Kircher et al. · Solid-State Electronics · 1989 · 204 citations

Electrical Engineering, Si/sio2 Interface, Semiconductor Device +1

The relationship between Oxide charge and device degradation: A comparative study of n- and p- channel MOSFET's

A. v. Schwerin, W. Hänsch, W. Weber · IEEE Transactions on Electron Devices · 1987 · 149 citations

Device Modeling, Electrical Engineering, Channel Mobility Degradation +13

The hot-electron problem in small semiconductor devices

W. Hänsch, M. Miura–Mattausch · Journal of Applied Physics · 1986 · 145 citations

Semiconductors, Device Modeling, Electrical Engineering +14

The evolution of the MINIMOS mobility model

S. Selberherr, W. Hänsch, M. H. Seavey et al. · Solid-State Electronics · 1990 · 97 citations

Engineering, Mobility Modeling, Numerical Simulation +4