A. v. Schwerin

The relationship between Oxide charge and device degradation: A comparative study of n- and p- channel MOSFET's

A. v. Schwerin, W. Hänsch, W. Weber · IEEE Transactions on Electron Devices · 1987 · 149 citations

Device Modeling, Electrical Engineering, Channel Mobility Degradation +13

Investigation on the oxide field dependence of hole trapping and interface state generation in SiO2 layers using homogeneous nonavalanche injection of holes

A. v. Schwerin, Marc Heyns, W. Weber · Journal of Applied Physics · 1990 · 90 citations

Engineering, Hole Injection, Silicon On Insulator +19

Lifetimes and substrate currents in static and dynamic hot-carrier degradation

W. Weber, C. Werner, A. v. Schwerin · 1986 · 58 citations

Electrical Engineering, Engineering, Hardware Reliability +12

Safety Evaluation of Automotive Electronics Using Virtual Prototypes

Jan-Hendrik Oetjens, Nico Bannow, Matthias Becker et al. · 2014 · 55 citations

Automotive Engineering, Engineering, Safety Science +19

A model for the time- and bias-dependence of p-MOSFET degradation

M. Brox, A. v. Schwerin, Q. Wang et al. · IEEE Transactions on Electron Devices · 1994 · 46 citations

Device Modeling, Electrical Engineering, Semiconductor Device +13