A. v. Schwerin - Concepedia

Author

A. v. Schwerin

Also Known As

A. SCHWERIN, A. Schwerin, A. V. Schwerin, A. v. Schwerin, A. von Schwerin, A.V. Schwerin, A.v. Schwerin, Alexander V. Schwerin

Publications

612

Citations

H-Index

Concepts

All Affiliations

Siemens (Germany)IMEC Siemens (United States)

About

A. v. Schwerin is an author at Siemens (Germany) specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	11	534
2	Applied Physics	8	8	445
3	Law	1	1	18
4	Medicine	1	1	18
5	Social Sciences	1	1	55

A. v. Schwerin

Publications

552

Citations

H-Index

Page 1

	Year	Citations
The relationship between Oxide charge and device degradation: A comparative study of n- and p- channel MOSFET's A. v. Schwerin, W. Hänsch, W. Weber IEEE Transactions on Electron Devices Device ModelingElectrical EngineeringChannel Mobility DegradationEngineeringSemiconductor Device	1987	149
Investigation on the oxide field dependence of hole trapping and interface state generation in SiO2 layers using homogeneous nonavalanche injection of holes A. v. Schwerin, Marc Heyns, W. Weber Journal of Applied Physics EngineeringHole InjectionSilicon On InsulatorSemiconductor DeviceNanoelectronics	1990	90
Lifetimes and substrate currents in static and dynamic hot-carrier degradation W. Weber, C. Werner, A. v. Schwerin Electrical EngineeringEngineeringHardware ReliabilityStress-induced Leakage CurrentBias Temperature Instability	1986	58
Safety Evaluation of Automotive Electronics Using Virtual Prototypes Jan-Hendrik Oetjens, Nico Bannow, Matthias Becker, Automotive EngineeringEngineeringSafety ScienceAdvanced Driver-assistance SystemIntelligent Automotive Electronics	2014	55
A model for the time- and bias-dependence of p-MOSFET degradation M. Brox, A. v. Schwerin, Q. Wang, IEEE Transactions on Electron Devices Device ModelingElectrical EngineeringSemiconductor DeviceEngineeringPhysics	1994	46
Point-defect-induced nucleation of the<i>ω</i>phase H. Dosch, A. v. Schwerin, J. Peisl Physical review. B, Condensed matter Materials SciencePoint-defect-induced NucleationEngineeringForce FieldCrystalline Defects	1986	38
MOSFET reverse short channel effect due to silicon interstitial capture in gate oxide H. Jacobs, A. v. Schwerin, D.L. Scharfetter, Device ModelingSemiconductor TechnologyElectrical EngineeringGate OxideEngineering	2002	27
A new self-consistent modeling approach to investigating MOSFET degradation W. Hänsch, A. v. Schwerin, F. Hofmann IEEE Electron Device Letters Device ModelingElectrical EngineeringEngineeringOxide ChargesStress-induced Leakage Current	1990	24
Analysis of the electrostatic potential difference in aqueous polymer two-phase systems Andreas Pfennig, A. v. Schwerin Fluid Phase Equilibria Materials ScienceElectroactive MaterialConducting PolymerElectrostatic Potential DifferenceEngineering	1995	21
Pathways to Human Experimentation, 1933-1945: Germany, Japan, and the United States Gerhard Baader, Susan E. Lederer, Morris Low, Osiris LawMass AtrocityResearch EthicsUnited StatesConcentration Camp Inmates	2005	18

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