A model for the time- and bias-dependence of p-MOSFET degradation

Abstract

Physical properties of both electron trapping and detrapping are identified to influence the degradation behavior of p-MOS transistors. Focusing on electron trapping first, we find as a decisive feature a spatially growing region of filled traps in the vicinity of the drain. Due to an exponential decrease of the electron injection current as a function of distance to the drain, its length grows logarithmically over time resulting in a logarithmic time dependence of the degradation. The logarithmic growth of this region is proven by means of charge-pumping experiments, whereas the logarithmic time dependence of the degradation itself is readily visible in the transistor current. Including electron-detrapping, the model permits a consistent description of both time- and bias-dependence of the degradation thereby leading to an improved expression for the lifetime of p-MOS transistors.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>