R. Venigalla

FINFET technology featuring high mobility SiGe channel for 10nm and beyond

Dechao Guo, G. Karve, Gen Tsutsui et al. · 2016 · 65 citations

Engineering, Computer Engineering, Electrical Engineering +14

Si nanowire CMOS fabricated with minimal deviation from RMG FinFET technology showing record performance

Isaac Lauer, N. Loubet, S.D. Kim et al. · 2015 · 59 citations

Engineering, Electrical Engineering, Microelectronics +16

Gate Length and Performance Scaling of Undoped-Body Extremely Thin SOI MOSFETs

A. Majumdar, Xinlin Wang, Arvind Kumar et al. · IEEE Electron Device Letters · 2009 · 37 citations

Engineering, Electrical Engineering, Materials Science +17

High-Performance Undoped-Body 8-nm-Thin SOI Field-Effect Transistors

Amlan Majumdar, Zhibin Ren, J.W. Sleight et al. · IEEE Electron Device Letters · 2008 · 37 citations

Engineering, Electrical Engineering, Materials Science +15

FDSOI CMOS devices featuring dual strained channel and thin BOX extendable to the 10nm node

Q. Liu, B. DeSalvo, P. Morin et al. · 2014 · 29 citations

Engineering, Computer Engineering, Electrical Engineering +12