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X-ray diffraction of III-nitrides

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Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy

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High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior

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Ultrahigh-Speed GaN High-Electron-Mobility Transistors With <inline-formula> <tex-math notation="LaTeX">$f_{T}/f_{\mathrm {max}}$ </tex-math></inline-formula> of 454/444 GHz

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