Yuanjie Lv

Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors

Yuanjie Lv, Zhaojun Lin, Yu Zhang et al. · Applied Physics Letters · 2011 · 86 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +10

Influence of Different Gate Biases and Gate Lengths on Parasitic Source Access Resistance in AlGaN/GaN Heterostructure FETs

Peng Cui, Huan Liu, Wei Lin et al. · IEEE Transactions on Electron Devices · 2017 · 57 citations

Polarization Charge Distribution, Wide-bandgap Semiconductor, Electrical Engineering +12

Effect of Polarization Coulomb Field Scattering on Parasitic Source Access Resistance and Extrinsic Transconductance in AlGaN/GaN Heterostructure FETs

Ming Yang, Zhaojun Lin, Jingtao Zhao et al. · IEEE Transactions on Electron Devices · 2016 · 55 citations

Polarization Charge Distribution, Wide-bandgap Semiconductor, Electrical Engineering +11

Surface morphology evolution and optoelectronic properties of heteroepitaxial Si-doped β-Ga2O3 thin films grown by metal-organic chemical vapor deposition

Daqiang Hu, Ying Wang, Shiwei Zhuang et al. · Ceramics International · 2017 · 39 citations

Oxide Heterostructures, Materials Science, Engineering +12

Oxygen annealing impact on <b> <i>β</i> </b>-Ga2O3 MOSFETs: Improved pinch-off characteristic and output power density

Yuanjie Lv, Hongyu Liu, Yuangang Wang et al. · Applied Physics Letters · 2020 · 35 citations

Continuous Wave, Semiconductor Technology, Electrical Engineering +14