Yuanjie Lv - Concepedia

Author

Yuanjie Lv

Hebei Semiconductor Research Institute

Also Known As

Y. J. Lv, Yuan-Jie Lv, Yuanjie Lv

Publications

681

Citations

H-Index

Concepts

All Affiliations

Hebei Semiconductor Research Institute Shandong University Institute of Semiconductors Xidian University China Academy of Engineering Physics

About

Yuanjie Lv is an author at Hebei Semiconductor Research Institute specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	13	18	481
2	Applied Physics	13	18	481
3	Electrical Engineering	12	17	431
4	Materials Science	4	4	96
5	Materials Engineering	2	2	30

Yuanjie Lv

Publications

554

Citations

H-Index

Page 1

	Year	Citations
Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors Yuanjie Lv, Zhaojun Lin, Yu Zhang, Applied Physics Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringPhysicsNanoelectronics	2011	86
Influence of Different Gate Biases and Gate Lengths on Parasitic Source Access Resistance in AlGaN/GaN Heterostructure FETs Peng Cui, Huan Liu, Wei Lin, IEEE Transactions on Electron Devices Polarization Charge DistributionWide-bandgap SemiconductorElectrical EngineeringGate LengthEngineering	2017	57
Effect of Polarization Coulomb Field Scattering on Parasitic Source Access Resistance and Extrinsic Transconductance in AlGaN/GaN Heterostructure FETs Ming Yang, Zhaojun Lin, Jingtao Zhao, IEEE Transactions on Electron Devices Polarization Charge DistributionWide-bandgap SemiconductorElectrical EngineeringEngineeringPhysics	2016	55
Surface morphology evolution and optoelectronic properties of heteroepitaxial Si-doped β-Ga2O3 thin films grown by metal-organic chemical vapor deposition Daqiang Hu, Ying Wang, Shiwei Zhuang, Ceramics International Oxide HeterostructuresMaterials ScienceEngineeringSurface Morphology EvolutionOptoelectronic Properties	2017	39
Oxygen annealing impact on <b> <i>β</i> </b>-Ga2O3 MOSFETs: Improved pinch-off characteristic and output power density Yuanjie Lv, Hongyu Liu, Yuangang Wang, Applied Physics Letters Continuous WaveSemiconductor TechnologyElectrical EngineeringOutput Power DensityEngineering	2020	35
Performance-enhanced NiO/β-Ga2O3 heterojunction diodes fabricated on an etched β-Ga2O3 surface Xing Lü, Tongling Xu, Yuxin Deng, Applied Surface Science Oxide HeterostructuresMaterials ScienceEngineeringOxide ElectronicsApplied Physics	2022	33
Impact of bulk traps in GaN buffer on the gate-lag transient characteristics of AlGaN/GaN HEMTs Xingye Zhou, Zhihong Feng, Li Wang, Solid-State Electronics Wide-bandgap SemiconductorElectrical EngineeringEngineeringGate-lag Transient CharacteristicsApplied Physics	2014	27
High performance AlGaN/GaN pressure sensor with a Wheatstone bridge circuit Xin Tan, Yuanjie Lv, Xingye Zhou, Microelectronic Engineering Electrical EngineeringAluminum Gallium NitrideWheatstone Bridge CircuitGan Power Device	2019	22
Effect of Different Gate Lengths on Polarization Coulomb Field Scattering Potential in AlGaN/GaN Heterostructure Field-Effect Transistors Peng Cui, Jianghui Mo, Fu Chen, Scientific Reports Wide-bandgap SemiconductorAdditional Polarization ChargesElectrical EngineeringDifferent Gate LengthsEngineering	2018	19
Effects of rapid thermal annealing on the electrical properties of the AlGaN/AlN/GaN heterostructure field-effect transistors with Ti/Al/Ni/Au gate electrodes Jingtao Zhao, Zhaojun Lin, Chongbiao Luan, Applied Physics Letters Materials EngineeringWide-bandgap SemiconductorElectrical EngineeringAluminium NitrideEngineering	2014	16

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