Hebei Semiconductor Research Institute

Gbps Terahertz External Modulator Based on a Composite Metamaterial with a Double-Channel Heterostructure

Yaxin Zhang, Shen Qiao, Shixiong Liang et al. · Nano Letters · 2015 · 238 citations

Thz Photonics, Terahertz Technology, Engineering +22

Dynamic Photoinduced Controlling of the Large Phase Shift of Terahertz Waves via Vanadium Dioxide Coupling Nanostructures

Yuncheng Zhao, Yaxin Zhang, Qiwu Shi et al. · ACS Photonics · 2018 · 163 citations

Thz Photonics, Terahertz Technology, Engineering +21

Demonstration of β-Ga₂O₃ Junction Barrier Schottky Diodes With a Baliga's Figure of Merit of 0.85 GW/cm² or a 5A/700 V Handling Capabilities

Yuanjie Lv, Yuangang Wang, Xingchang Fu et al. · IEEE Transactions on Power Electronics · 2020 · 156 citations

Wide-bandgap Semiconductor, Engineering, Wide-bandgap P-type Niox +16

High-Performance Vertical $\beta$ -Ga₂O₃Schottky Barrier Diode With Implanted Edge Termination

Hong Zhou, Qian Feng, Jing Ning et al. · IEEE Electron Device Letters · 2019 · 143 citations

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +11

2.41 kV Vertical P-Nio/n-Ga ₂ O ₃ Heterojunction Diodes With a Record Baliga's Figure-of-Merit of 5.18 GW/cm ²

Hehe Gong, Yuanjie Lv, Xingchang Fu et al. · IEEE Transactions on Power Electronics · 2021 · 140 citations