Qian Feng

Field-Plated Lateral β-Ga2O3 Schottky Barrier Diode with High Reverse Blocking Voltage of More Than 3 kV and High DC Power Figure-of-Merit of 500 MW/cm2

Zhuangzhuang Hu, Hong Zhou, Qian Feng et al. · IEEE Electron Device Letters · 2018 · 170 citations

Engineering, Electrical Engineering, Materials Science +15

Progress in state-of-the-art technologies of Ga ₂ O ₃ devices

Chenlu Wang, Jincheng Zhang, Shengrui Xu et al. · Journal of Physics D Applied Physics · 2021 · 167 citations

Engineering, Materials Engineering, Materials Science +17

High-Performance Vertical $\beta$ -Ga₂O₃Schottky Barrier Diode With Implanted Edge Termination

Hong Zhou, Qian Feng, Jing Ning et al. · IEEE Electron Device Letters · 2019 · 150 citations

Engineering, Electrical Engineering, Materials Engineering +14

AlGaN/GaN MOS-HEMT With $\hbox{HfO}_{2}$ Dielectric and $\hbox{Al}_{2}\hbox{O}_{3}$ Interfacial Passivation Layer Grown by Atomic Layer Deposition

Yuanzheng Yue, Yue Hao, Jincheng Zhang et al. · IEEE Electron Device Letters · 2008 · 140 citations

Engineering, Electrical Engineering, Materials Science +17

Demonstration of the p-NiO_x/n-Ga₂O₃ Heterojunction Gate FETs and Diodes With BV²/R_on,sp Figures of Merit of 0.39 GW/cm² and 1.38 GW/cm²

Chenlu Wang, Hehe Gong, Weina Lei et al. · IEEE Electron Device Letters · 2021 · 132 citations

Engineering, Electrical Engineering, Materials Science +10