Hehe Gong - Concepedia

Author

Hehe Gong

Nanjing University ORCID

Also Known As

Gong, Hehe, H Gong, H. H. Gong, Hangcheng Gong, Haolei Gong, He-He Gong, He-he GONG, Hehe Gong, HengYue Gong, Jiang, Y.

Publications

2.2K

Citations

H-Index

Concepts

All Affiliations

Nanjing University City University of Hong Kong, Shenzhen Research Institute Collaborative Innovation Center of Advanced Microstructures Xidian University Virginia Tech

About

Hehe Gong is an author at Nanjing University specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	22	27	1.7K
2	Applied Physics	22	27	1.7K
3	Chemistry	3	3	187
4	Natural Sciences	1	1	122
5	Chemical Engineering	1	1	25

Hehe Gong

Publications

2.1K

Citations

H-Index

Page 1

	Year	Citations
A 1.86-kV double-layered NiO/<b> <i>β</i> </b>-Ga2O3 vertical p–n heterojunction diode Hehe Gong, Xuanhu Chen, Yang Xu, Applied Physics Letters Wide-bandgap SemiconductorEngineeringOptoelectronic DevicesSemiconductor DeviceSemiconductors	2020	221
An avalanche-and-surge robust ultrawide-bandgap heterojunction for power electronics Feng Zhou, Hehe Gong, Ming Xiao, Nature Communications Wide-bandgap SemiconductorElectrical EngineeringEngineeringPhysicsElectronic Engineering	2023	158
2.41 kV Vertical P-Nio/n-Ga <sub>2</sub> O <sub>3</sub> Heterojunction Diodes With a Record Baliga's Figure-of-Merit of 5.18 GW/cm <sup>2</sup> Hehe Gong, Yuanjie Lv, Xingchang Fu, IEEE Transactions on Power Electronics	2021	140
Demonstration of the p-NiO<sub>x</sub>/n-Ga<sub>2</sub>O<sub>3</sub> Heterojunction Gate FETs and Diodes With BV<sup>2</sup>/R<sub>on,sp</sub> Figures of Merit of 0.39 GW/cm<sup>2</sup> and 1.38 GW/cm<sup>2</sup> Chenlu Wang, Hehe Gong, Weina Lei, IEEE Electron Device Letters SemiconductorsLow-power ElectronicsElectrical EngineeringWide-bandgap SemiconductorEngineering	2021	130
1.37 kV/12 A NiO/β-Ga<sub>2</sub>O<sub>3</sub>Heterojunction Diode With Nanosecond Reverse Recovery and Rugged Surge-Current Capability Hehe Gong, Feng Zhou, Weizong Xu, IEEE Transactions on Power Electronics Wide-bandgap SemiconductorRobust ReliabilityEngineeringPower EngineeringPower Circuit	2021	124
Band Alignment and Interface Recombination in NiO/<i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Type-II p-n Heterojunctions Hehe Gong, Xuanhu Chen, Yang Xu, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorEngineeringOptoelectronic DevicesChemistrySemiconductor Device	2020	122
β-Ga2O3 vertical heterojunction barrier Schottky diodes terminated with p-NiO field limiting rings Hehe Gong, Xinxin Yu, Yang Xu, Applied Physics Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering	2021	120
β-Ga2O3 hetero-junction barrier Schottky diode with reverse leakage current modulation and BV2/Ron,sp value of 0.93 GW/cm2 Qinglong Yan, Hehe Gong, Jincheng Zhang, Applied Physics Letters Wide-bandgap SemiconductorSemiconductor TechnologyElectrical EngineeringSp ValueElectronic Devices	2021	119
1.95-kV Beveled-Mesa NiO/β-Ga<sub>2</sub>O<sub>3</sub> Heterojunction Diode With 98.5% Conversion Efficiency and Over Million-Times Overvoltage Ruggedness Feng Zhou, Hehe Gong, Weizong Xu, IEEE Transactions on Power Electronics Wide-bandgap SemiconductorElectrical EngineeringEngineeringPower DeviceApplied Physics	2021	98
Low density of interface trap states and temperature dependence study of Ga2O3 Schottky barrier diode with p-NiOx termination Qinglong Yan, Hehe Gong, Hong Zhou, Applied Physics Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringPhysicsP-niox Termination	2022	84

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