Hehe Gong

A 1.86-kV double-layered NiO/<b> <i>β</i> </b>-Ga2O3 vertical p–n heterojunction diode

Hehe Gong, Xuanhu Chen, Yang Xu et al. · Applied Physics Letters · 2020 · 232 citations

Engineering, Electrical Engineering, Materials Science +17

An avalanche-and-surge robust ultrawide-bandgap heterojunction for power electronics

Feng Zhou, Hehe Gong, Ming Xiao et al. · Nature Communications · 2023 · 173 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

2.41 kV Vertical P-Nio/n-Ga ₂ O ₃ Heterojunction Diodes With a Record Baliga's Figure-of-Merit of 5.18 GW/cm ²

Hehe Gong, Yuanjie Lv, Xingchang Fu et al. · IEEE Transactions on Power Electronics · 2021 · 143 citations

Engineering, Electrical Engineering, Materials Science +12

Demonstration of the p-NiO_x/n-Ga₂O₃ Heterojunction Gate FETs and Diodes With BV²/R_on,sp Figures of Merit of 0.39 GW/cm² and 1.38 GW/cm²

Chenlu Wang, Hehe Gong, Weina Lei et al. · IEEE Electron Device Letters · 2021 · 132 citations

Engineering, Electrical Engineering, Materials Science +10

Band Alignment and Interface Recombination in NiO/<i>β</i>-Ga₂O₃ Type-II p-n Heterojunctions

Hehe Gong, Xuanhu Chen, Yang Xu et al. · IEEE Transactions on Electron Devices · 2020 · 127 citations

Engineering, Materials Engineering, Materials Science +17